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Microsemi expands silicon carbide product portfolios

Microsemi Corporation will be expanding its Silicon Carbide (SiC) MOSFET and SiC diode product portfolios early next quarter, including samples of its next-generation 1200-volt (V), 25mOhm and 80 mOhm SiC MOSFET devices; next-generation 700V, 50A Schottky barrier diode (SBD) and corresponding die.

These SiC solutions, along with other recently announced devices in the SiC SBD/MOSFET product families, will be demonstrated June 5th-7th at PCIM Europe 2018, held at the Exhibition Centre in Nuremberg, Germany.



As Microsemi continues to expand development efforts for its SiC product family, it has become one of the few suppliers providing a range of Si/SiC power discrete and module solutions to the market.

These next-generation SiC MOSFETs are suited for a number of applications within the industrial and automotive markets, including hybrid electric vehicle (HEV)/EV charging, conductive/inductive onboard chargers (OBCs), DC-DC converters and EV powertrain/traction control.

They can also be used for switch mode power supplies, photovoltaic (PV) inverters and motor control in medical, aerospace, defense and data centre applications.

“Fast adoption of SiC solutions for applications such as EV charging, DC-DC converters, powertrain, medical and industrial equipment, and aviation actuation demand a high degree of efficiency, safety and reliability on components used in such systems,” said Leon Gross, vice president and business unit manager for Microsemi’s Power Discretes and Modules business unit. “Microsemi’s next-generation SiC MOSFET and SiC diode families will include AEC-Q101 qualifications, which will insure high reliability while ruggedness is demonstrated by high repetitive unclamped inductive switching (UIS) capability at rated current without degradation or failures.”

According to market research firm Technavio, the global SiC market for semiconductor applications is expected to reach nearly $540.5 million by 2021, growing at a compound annual growth rate (CAGR) of more than 18%.

The firm also forecasts the global SiC market for automotive semiconductor applications at nearly 20% CAGR by 2021.

Microsemi is well-positioned with these trends, with its SiC MOSFET and Schottky barrier diode devices avalanche-rated with a high short-circuit withstand rating for robust operation, and the capabilities necessary to enable these growing application trends.

Microsemi‘s next-generation 1200V, 25/40/80mOhm SiC MOSFET devices and die as well as its next-generation 1200V and 700V SiC SBD devices offer customers attractive benefits in comparison to competing Si/SiC diode/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche/UIS rating and higher short-circuit withstand rating for rugged and reliable operation.

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