{"version":"1.0","provider_name":"Engineer News Network","provider_url":"https:\/\/www.engineernewsnetwork.com\/blog","title":"1200V SiC MOSFETs in bare die format - Engineer News Network","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"AR05uithBI\"><a href=\"https:\/\/www.engineernewsnetwork.com\/blog\/200v-sic-mosfets-in-bare-die-format\/\">1200V SiC MOSFETs in bare die format<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.engineernewsnetwork.com\/blog\/200v-sic-mosfets-in-bare-die-format\/embed\/#?secret=AR05uithBI\" width=\"600\" height=\"338\" title=\"&#8220;1200V SiC MOSFETs in bare die format&#8221; &#8212; Engineer News Network\" data-secret=\"AR05uithBI\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/\/# sourceURL=https:\/\/www.engineernewsnetwork.com\/blog\/wp-includes\/js\/wp-embed.min.js\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2024\/11\/7589_LR.jpg","thumbnail_width":2100,"thumbnail_height":1500,"description":"Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices are particularly suited to applications within automotive traction inverters. They are now available and shipping as early test samples in bare die format \u2013 allowing customers to customise them to meet the needs of their &hellip;"}