{"id":15880,"date":"2020-03-23T10:00:00","date_gmt":"2020-03-23T10:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=15880"},"modified":"2020-03-20T11:07:17","modified_gmt":"2020-03-20T11:07:17","slug":"dual-output-igbt-mosfet-driver","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/dual-output-igbt-mosfet-driver\/","title":{"rendered":"Dual output IGBT\/MOSFET driver"},"content":{"rendered":"\n

Toshiba Electronics Europe GmbH<\/a><\/strong> announces a new IGBT\/MOSFET gate driver equipped with additional built-in functionality.\u00a0<\/p>\n\n\n\n

The new TLP5231 will simplify the design task in a wide range of applications including industrial inverters, uninterruptible power supplies (UPS), power conditioners for solar energy and motor controls.<\/p>\n\n\n\n

The TLP5231 pre-driver has a pair of outputs that are designed to drive external p-channel and n-channel MOSFETs used for current buffers. This allows the usage of a wide range of MOSFETs with various current ratings, meaning that the IGBT can be controlled by a rail to rail gate voltage. <\/p>\n\n\n\n

The driver can source and sink peak currents up to 2.5 A and is rated for 1.0 A continuously.<\/p>\n\n\n\n

The device incorporates overcurrent detection, implemented by sensing VCE(sat) as well as undervoltage lock out (UVLO), both of which provide an open collector fault signal to the primary side. <\/p>\n\n\n\n

These features are not available on existing products (such as the TLP5214 & TLP5214A) and their inclusion on the TLP5231 significantly eases the process of gate drive circuit design.<\/p>\n\n\n\n

Additionally, the \u2018gate voltage soft turn off time\u2019 after VCE(sat) overcurrent detection can be controlled by another external n-channel MOSFET. Propagation delays (L\/H & H\/L) are as low as 100ns.<\/p>\n\n\n\n

Despite being housed in a tiny SO16L surface mount package, the TLP5231 offers an isolation voltage (BVs) of 5000 Vrms (min.) with an internal isolation thickness in excess of 0.4 mm. <\/p>\n\n\n\n

Creepage and clearance distances are at least 8.0 mm, making it suitable for safety-critical applications.<\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba Electronics Europe GmbH announces a new IGBT\/MOSFET gate driver equipped with additional built-in functionality.\u00a0 The new TLP5231 will simplify the design task in a wide range of applications including industrial inverters, uninterruptible power supplies (UPS), power conditioners for solar energy and motor controls. The TLP5231 pre-driver has a pair of outputs that are designed …<\/p>\n","protected":false},"author":1,"featured_media":15881,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[7926,7925,94],"class_list":["post-15880","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-igbt-mosfet-driver","tag-tlp5231","tag-toshiba"],"yoast_head":"\nDual output IGBT\/MOSFET driver - Engineer News Network<\/title>\n<meta name=\"description\" content=\"Enhanced device includes comprehensive fault detection to simplify circuit design\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/dual-output-igbt-mosfet-driver\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Dual output IGBT\/MOSFET driver - 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