{"id":15977,"date":"2020-04-01T08:00:00","date_gmt":"2020-04-01T07:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=15977"},"modified":"2020-03-31T11:53:16","modified_gmt":"2020-03-31T10:53:16","slug":"two-new-80v-n-channel-power-mosfets","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/two-new-80v-n-channel-power-mosfets\/","title":{"rendered":"Two new 80V N-channel power MOSFETs"},"content":{"rendered":"\n

Toshiba Electronics Europe<\/a><\/strong> has launched two new 80V N-channel power MOSFETs based upon their latest generation U-MOSX-H process. <\/p>\n\n\n\n

Both devices are suited to a wide range of power applications where low-loss operation is important, including highly efficient AC-DC and DC-DC conversion in data centres and communication base stations as well as a broad range of motor drive equipment.<\/p>\n\n\n\n

Both the TPH2R408QM and TPN19008QM are 80V U-MOSX-H products that exhibit a reduction of around 40% in drain-source on-resistance (RDS(ON)) compared to corresponding 80V products in earlier processes such as U-MOSVIII-H. <\/p>\n\n\n\n

As a result, the TPN19008QM has an RDS(ON) value of 19m\u03a9 (max.) while the TPH2R408QM value is just 2.43m\u03a9.<\/p>\n\n\n\n

Optimising the device structure has improved the trade-off between RDS(ON) and gate charge characteristics by up to 15% and the trade-off between RDS(ON) and output charge by 31%. Combining this with the improvements in RDS(ON) means that the new devices feature the lowest power dissipation in the industry.<\/p>\n\n\n\n

Both devices are housed in surface mount packages and rated for a drain-source voltage (VDSS) of 80V. They can operate at channel temperatures (Tch) as high as 175\u00baC. <\/p>\n\n\n\n

The TPN19008QM is rated for a drain current (ID) of 34A and is housed in a 3.3mm x 3.3mm TSON advance package while the TPH2R408QM is rated for an ID of 120A and housed in a 5.0mm x 6.0mm SOP advance package.<\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba Electronics Europe has launched two new 80V N-channel power MOSFETs based upon their latest generation U-MOSX-H process.  Both devices are suited to a wide range of power applications where low-loss operation is important, including highly efficient AC-DC and DC-DC conversion in data centres and communication base stations as well as a broad range of …<\/p>\n","protected":false},"author":1,"featured_media":15978,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1],"tags":[94,7999,8000],"class_list":["post-15977","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-process","tag-toshiba","tag-tph2r408qm","tag-tpn19008qm"],"yoast_head":"\nTwo new 80V N-channel power MOSFETs - Engineer News Network<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe has launched two new 80V N-channel power MOSFETs based upon their latest generation U-MOSX-H process\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/two-new-80v-n-channel-power-mosfets\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Two new 80V N-channel power MOSFETs - 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