{"id":17228,"date":"2020-06-25T10:00:00","date_gmt":"2020-06-25T09:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=17228"},"modified":"2020-06-24T10:47:25","modified_gmt":"2020-06-24T09:47:25","slug":"enhanced-fom-capabilities-boost-power-supply-efficiency-levels","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/enhanced-fom-capabilities-boost-power-supply-efficiency-levels\/","title":{"rendered":"Enhanced FoM capabilities boost power supply efficiency levels"},"content":{"rendered":"\n

Toshiba has introduced eight new super junction N-channel power MOSFETs to strengthen its latest DTMOSVI series<\/a><\/strong> – which has already gained a lot of market traction thanks to an excellent ratio of on-resistance and support for elevated switching speeds.<\/p>\n\n\n\n

The 650V-rated TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z and TK210V65Z devices all possess highly appealing performance parameters. <\/p>\n\n\n\n

These MOSFETs present engineers with a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation.\u00a0<\/p>\n\n\n\n

As a consequence, they can raise the efficiency of switch-mode power supplies by approximately 0.36 % – thereby enabling a substantial decrease in switching losses, compared to the previous generation.<\/p>\n\n\n\n

The new MOSFETs are targeted at use in the switch-mode power supplies of a broad range of industrial equipment (including data center infrastructure, back-up power sources and the power conditioners of photovoltaic generators). They will allow major performance upgrades when replacing existing devices. <\/p>\n\n\n\n

The TK110Z65Z, TK125V65Z, TK170V65Z and TK210V65Z offer a Kelvin source pin for improved control and efficiency increase potential. <\/p>\n\n\n\n

The TK110N65Z and TK110Z65Z fit into TO-247 packages with 3\/4 pin\u2019s, while the TK110A65Z, TK155A65Z and TK190A65Z come in fully isolated TO-220SIS packages. <\/p>\n\n\n\n

Finally, the TK125V65Z, TK170V65Z and TK210V65Z are all housed in an 8mm x 8mm DFN package format for surface mounting. This means DTMOSVI solutions can now be sourced whatever the specific board real estate requirements are.<\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba has introduced eight new super junction N-channel power MOSFETs to strengthen its latest DTMOSVI series – which has already gained a lot of market traction thanks to an excellent ratio of on-resistance and support for elevated switching speeds. The 650V-rated TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z and TK210V65Z devices all possess highly appealing …<\/p>\n","protected":false},"author":1,"featured_media":17229,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[8504,94],"class_list":["post-17228","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-n-channel-mosfet-series","tag-toshiba"],"yoast_head":"\nEnhanced FoM capabilities boost power supply efficiency levels - Engineer News Network<\/title>\n<meta name=\"description\" content=\"Toshiba expands super junction N-Channel MOSFET series with addition of new 650V devices\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/enhanced-fom-capabilities-boost-power-supply-efficiency-levels\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Enhanced FoM capabilities boost power supply efficiency levels - 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