{"id":1769,"date":"2017-10-16T16:45:03","date_gmt":"2017-10-16T15:45:03","guid":{"rendered":"https:\/\/engineernewsnetwork.com\/blog\/?p=1769"},"modified":"2017-10-16T16:46:54","modified_gmt":"2017-10-16T15:46:54","slug":"toshiba-launches-40v-and-60v-mosfets-based-on-latest-generation-of-trench-process","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/toshiba-launches-40v-and-60v-mosfets-based-on-latest-generation-of-trench-process\/","title":{"rendered":"Toshiba launches 40V and 60V MOSFETs based on latest generation of trench process"},"content":{"rendered":"<span class=\"highlight highlight-blue\"><a href=\"http:\/\/www.toshiba.semicon-storage.com\" target=\"_blank\" rel=\"noopener\">Toshiba Electronics Europe<\/a><\/span> has announced new 40V and 60V power MOSFETs based on the company\u2019s latest generation U-MOS-IX-H trench semiconductor process.<\/p>\n<p>The\u00a0TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel\u00a0MOSFETs can be driven by 4.5V logic levels and offer ultra-low maximum on resistance (RDS(ON)) ratings down to just 3.1m\u03a9 (@ VGS\u00a0= 10V).<br \/>\n<script async src=\"\/\/pagead2.googlesyndication.com\/pagead\/js\/adsbygoogle.js\"><\/script><br \/>\n<ins class=\"adsbygoogle\" style=\"display: block; text-align: center;\" data-ad-format=\"fluid\" data-ad-layout=\"in-article\" data-ad-client=\"ca-pub-7565662001938327\" data-ad-slot=\"7585079586\"><\/ins><br \/>\n<script>\n(adsbygoogle = window.adsbygoogle || []).push({});\n<\/script><br \/>\nSupplied in compact DPAK packaging, the devices are ideal for high-efficiency power conversion applications including AC-DC and DC-DC converters, power supplies and motor drives.<\/p>\n<p>The\u00a0TK3R1P04PL is a 40V MOSFET with a maximum\u00a0RDS(ON)\u00a0of 3.1m\u03a9 and a maximum drain current (ID) rating of 58A (at a temperature of 25\u00baC). The 60V\u00a0TK4R4P06PL and TK6R7P06PL have respective maximum\u00a0RDS(ON)\u00a0and\u00a0ID\u00a0ratings of 4.4m\u03a9\u00a0and 58A and 6.7m\u03a9\u00a0and 46A.<\/p>\n<p>All of the new MOSFETs are designed to operate with a low output charge to further optimise efficiency and performance.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Electronics Europe has announced new 40V and 60V power MOSFETs based on the company\u2019s latest generation U-MOS-IX-H trench semiconductor process. The\u00a0TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel\u00a0MOSFETs can be driven by 4.5V logic levels and offer ultra-low maximum on resistance (RDS(ON)) ratings down to just 3.1m\u03a9 (@ VGS\u00a0= 10V). Supplied in compact DPAK packaging, the devices &hellip;<\/p>\n","protected":false},"author":1,"featured_media":1770,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[532,533,534,530,531],"class_list":["post-1769","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-tk3r1p04pl","tag-tk4r4p06pl","tag-tk6r7p06pl","tag-toshiba-electronics-europe","tag-trench-semiconductor"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Toshiba launches 40V and 60V MOSFETs based on latest generation of trench process - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/toshiba-launches-40v-and-60v-mosfets-based-on-latest-generation-of-trench-process\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Toshiba launches 40V and 60V MOSFETs based on latest generation of trench process - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Toshiba Electronics Europe has announced new 40V and 60V power MOSFETs based on the company\u2019s latest generation U-MOS-IX-H trench semiconductor process. The\u00a0TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel\u00a0MOSFETs can be driven by 4.5V logic levels and offer ultra-low maximum on resistance (RDS(ON)) ratings down to just 3.1m\u03a9 (@ VGS\u00a0= 10V). 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