{"id":17778,"date":"2020-08-19T10:00:00","date_gmt":"2020-08-19T09:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=17778"},"modified":"2020-08-18T10:02:13","modified_gmt":"2020-08-18T09:02:13","slug":"automotive-qualified-devices-curb-power-consumption-to-boost-vehicle-fuel-economy","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/automotive-qualified-devices-curb-power-consumption-to-boost-vehicle-fuel-economy\/","title":{"rendered":"Automotive-qualified devices curb power consumption to boost vehicle fuel economy"},"content":{"rendered":"\n<p class=\"wp-block-paragraph\"><strong><a href=\"http:\/\/www.toshiba.semicon-storage.com\" target=\"_blank\" rel=\"noreferrer noopener\">Toshiba<\/a><\/strong> has developed a series of new high-efficiency N-channel MOSFETs for automotive applications that are based on the company\u2019s advanced U-MOSVIII-H process technology.\u00a0<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">The XPN3R804NC and XPN7R104NC both have 40V voltage ratings, while the XPN6R706NC and XPN12006NC support 60V operation. They all exhibit extremely low ON-resistance values, reaching down to 3.8m\u03a9 (for the XPN3R804NC at 10V), plus minimal leakage current.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">These MOSFETs are housed in surface-mount TSON Advance (WF) packages which ensure that board utilisation is kept to a minimum. They have a 3.3mm \u00d7 3.6mm (typical) footprint and can replace devices with a size of 5mm \u00d7 6mm. Through inclusion of wettable flank terminals, board mounting procedures and automated optical inspection (AOI) activities are also aided.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">Fully AEC-Q101-compliant, these MOSFET devices are intended for deployment within automotive environments.&nbsp;<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">Thanks to their inherent compactness, they can contribute significantly to a shrinkage in the size of vehicles\u2019 electronic control units (ECUs). Other potential application scenarios where they may be utilised include switching regulators, DC-DC converters and motor drivers.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba has developed a series of new high-efficiency N-channel MOSFETs for automotive applications that are based on the company\u2019s advanced U-MOSVIII-H process technology.\u00a0 The XPN3R804NC and XPN7R104NC both have 40V voltage ratings, while the XPN6R706NC and XPN12006NC support 60V operation. They all exhibit extremely low ON-resistance values, reaching down to 3.8m\u03a9 (for the XPN3R804NC at &hellip;<\/p>\n","protected":false},"author":1,"featured_media":17779,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[121,8732,94],"class_list":["post-17778","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-automotive","tag-compact-low-on-resistance-n-channel-mosfets","tag-toshiba"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Automotive-qualified devices curb power consumption to boost vehicle fuel economy - Engineer News Network<\/title>\n<meta name=\"description\" content=\"Toshiba has developed a series of new high-efficiency N-channel MOSFETs for automotive applications that are based on the company\u2019s advanced U-MOSVIII-H process technology\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/automotive-qualified-devices-curb-power-consumption-to-boost-vehicle-fuel-economy\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Automotive-qualified devices curb power consumption to boost vehicle fuel economy - 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