{"id":21065,"date":"2022-02-28T09:00:00","date_gmt":"2022-02-28T09:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=21065"},"modified":"2022-02-25T11:44:39","modified_gmt":"2022-02-25T11:44:39","slug":"push-pull-three-stage-fully-integrated-doherty-rf-transistor","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/push-pull-three-stage-fully-integrated-doherty-rf-transistor\/","title":{"rendered":"Push-pull three-stage fully integrated Doherty RF transistor"},"content":{"rendered":"\n

Ampleon<\/a><\/strong>, utilising advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull three-stage fully integrated Doherty RF transistor<\/a><\/strong> being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands.\u00a0<\/p>\n\n\n\n

This multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.<\/p>\n\n\n\n

The driver product family comes in PQFN 12 x 7mm\u00b2 packages, integrating the carrier and peaking devices, input splitter, output combiner and pre-match for each section. The push-pull configuration of the devices eliminates the need for an interstage isolator, and the integrated pre- and post-match enables the input impedance of 50 ohms and output impedance of 25 ohms.<\/p>\n\n\n\n

The level of integration in the B11G3338N80D significantly simplifies the design process, reduces BOM cost and assures reliability and volume consistency. The compact pin-to-pin compatible footprint for sub-6GHz bands minimises the layout work, which is essential for today\u2019s space-constrained applications.<\/p>\n\n\n\n

The Doherty transistors typically deliver a drain efficiency of 22% at 12dB power back-off and power gain of 34dB at the quoted test conditions. Additionally, the design integrates ESD protection and bias gate switching.<\/p>\n","protected":false},"excerpt":{"rendered":"

Ampleon, utilising advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull three-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands.\u00a0 This multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations. The …<\/p>\n","protected":false},"author":1,"featured_media":21066,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[2343,9967],"class_list":["post-21065","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-ampleon","tag-push-pull-three-stage-fully-integrated-doherty-rf-transistor"],"yoast_head":"\nPush-pull three-stage fully integrated Doherty RF transistor - Engineer News Network<\/title>\n<meta name=\"description\" content=\"Ampleon extends isolator-free sub-6GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE Macro base station applications extends isolator-free sub-6GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE Macro base station applications\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/push-pull-three-stage-fully-integrated-doherty-rf-transistor\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Push-pull three-stage fully integrated Doherty RF transistor - 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