{"id":21398,"date":"2022-03-30T09:30:00","date_gmt":"2022-03-30T08:30:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=21398"},"modified":"2022-03-29T10:43:38","modified_gmt":"2022-03-29T09:43:38","slug":"rf-power-discrete-solutions-for-32t32r-active-antenna-systems","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/rf-power-discrete-solutions-for-32t32r-active-antenna-systems\/","title":{"rendered":"RF power discrete solutions for 32T32R active antenna systems"},"content":{"rendered":"\n

NXP Semiconductors<\/a><\/strong> has announced a new series of RF power discrete solutions for 32T32R active antenna systems, using its latest proprietary gallium nitride (GaN) technology. This new series complements NXP\u2019s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 to 4.0 GHz. NXP now offers the largest RF GaN portfolio for massive multiple input, multiple output (massive MIMO) 5G radios.<\/p>\n\n\n\n

As 5G networks continue to expand around the world, mobile network operators are adding 32T32R radios to increase their massive MIMO coverage beyond ultra-dense urban areas into less dense urban and suburban areas. By combining 32 antennas instead of 64, coverage can be maintained more cost-effectively, while maintaining the high-end 5G experience enabled by massive MIMO.<\/p>\n\n\n\n

NXP\u2019s 32T32R solutions deliver twice the power in the same package as its 64T64R solutions, resulting in a smaller and lighter overall 5G connectivity solution. This pin-compatibility enables network operators to scale rapidly across frequency and power levels.<\/p>\n\n\n\n

\u201cAs 5G deployments continue to expand globally, network operators need to extend their coverage while maintaining performance,\u201d said Jim Norling, Vice President and General Manager, High Power Solutions, Radio Power, NXP. \u201cBy offering twice the power in the same package size, NXP enables RF engineers to create base stations that are smaller, lighter and easier to deploy and conceal in urban and suburban areas.\u201d<\/p>\n\n\n\n

The new series of GaN discrete solutions are designed for 10 W average power at the antenna, targeting 320 W radio units, with up to 58% of drain efficiency. It includes driver and final-stage transistors and leverages NXP\u2019s highly linearizable RF GaN technology manufactured in NXP\u2019s new GaN fab in Arizona.<\/p>\n","protected":false},"excerpt":{"rendered":"

NXP Semiconductors has announced a new series of RF power discrete solutions for 32T32R active antenna systems, using its latest proprietary gallium nitride (GaN) technology. This new series complements NXP\u2019s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 to 4.0 GHz. NXP now offers the …<\/p>\n","protected":false},"author":1,"featured_media":21399,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[10092,10094,10091,9082,10093],"class_list":["post-21398","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-mimo","tag-multiple-input","tag-multiple-output","tag-nxp","tag-rf-power-transistors"],"yoast_head":"\nRF power discrete solutions for 32T32R active antenna systems - Engineer News Network<\/title>\n<meta name=\"description\" content=\"NXP\u2019s new family of 32T32R discrete solutions enable smaller, lighter weight 5G radios to ease deployment in urban and suburban areas\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/rf-power-discrete-solutions-for-32t32r-active-antenna-systems\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"RF power discrete solutions for 32T32R active antenna systems - 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