{"id":22909,"date":"2022-09-01T09:30:00","date_gmt":"2022-09-01T08:30:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=22909"},"modified":"2022-08-31T09:39:57","modified_gmt":"2022-08-31T08:39:57","slug":"third-generation-650v-silicon-carbide-sic-mosfets","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/","title":{"rendered":"Third generation 650V silicon carbide (SiC) MOSFETs"},"content":{"rendered":"\n<p class=\"wp-block-paragraph\"><strong><a href=\"http:\/\/www.toshiba.semicon-storage.com\" target=\"_blank\" rel=\"noreferrer noopener\">Toshiba Electronics Europe<\/a><\/strong> has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment.\u00a0<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">These highly efficient and versatile products will be used in a variety of demanding applications, including switch mode power supplies (SMPS) and uninterruptible power supplies (UPS) for servers, data centres and communication equipment. They will also find applications in renewable energy, including photovoltaic (PV) inverters and bi-directional DC-DC converters, such as those used for electric vehicle (EV) charging.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">The new TW015N65C, TW027N65C, TW048N65C, TW083N65C and TW107N65C are based on Toshiba&#8217;s advanced third-generation SiC process which optimises the cell structures used in second-generation devices.\u00a0<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">As a result of this advancement, a key figure of merit (FoM) calculated as the product of drain-source on-resistance (RDS(on)) and gate-drain charge (Qg) to represent both static and dynamic losses has improved by about 80%. This significantly reduces losses and allows power solutions with higher power densities and lower running costs to be developed.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">In common with earlier devices, the new third-generation MOSFETs include a built-in SiC Schottky barrier with a low forward voltage (VF) of -1.35V (typ.) to suppress fluctuation in RDS(on), thereby enhancing reliability.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">The new devices are able to handle currents (ID) up to 100A and feature RDS(on) values as low as 15m\u03a9. All devices are housed in an industry-standard TO-247 package.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">Shipments of the new MOSFETs start today.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Electronics Europe has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment.\u00a0 These highly efficient and versatile products will be used in a variety of demanding applications, including switch mode power supplies (SMPS) and uninterruptible power supplies (UPS) for servers, data centres and communication equipment. They will &hellip;<\/p>\n","protected":false},"author":1,"featured_media":22910,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[10731,4133,4413,94,10733,10730,10732,10729,10734],"class_list":["post-22909","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-650v-silicon-carbide","tag-mosfets","tag-sic","tag-toshiba","tag-tw015n65c","tag-tw027n65c","tag-tw048n65c","tag-tw083n65c","tag-tw107n65c"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Third generation 650V silicon carbide (SiC) MOSFETs - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Third generation 650V silicon carbide (SiC) MOSFETs - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Toshiba Electronics Europe has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment.\u00a0 These highly efficient and versatile products will be used in a variety of demanding applications, including switch mode power supplies (SMPS) and uninterruptible power supplies (UPS) for servers, data centres and communication equipment. They will &hellip;\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/\" \/>\n<meta property=\"og:site_name\" content=\"Engineer News Network\" \/>\n<meta property=\"article:published_time\" content=\"2022-09-01T08:30:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2022\/08\/7395_LR.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"2100\" \/>\n\t<meta property=\"og:image:height\" content=\"1500\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"admin\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"admin\" \/>\n\t<meta name=\"twitter:label2\" content=\"Estimated reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/\"},\"author\":{\"name\":\"admin\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#\\\/schema\\\/person\\\/4477342aea8e299c6a21761e513ea8e1\"},\"headline\":\"Third generation 650V silicon carbide (SiC) MOSFETs\",\"datePublished\":\"2022-09-01T08:30:00+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/\"},\"wordCount\":246,\"image\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2022\\\/08\\\/7395_LR.jpg\",\"keywords\":[\"650V silicon carbide\",\"MOSFETs\",\"SiC\",\"Toshiba\",\"TW015N65C\",\"TW027N65C\",\"TW048N65C\",\"TW083N65C\",\"TW107N65C\"],\"articleSection\":[\"Electronics\"],\"inLanguage\":\"en-GB\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/\",\"name\":\"Third generation 650V silicon carbide (SiC) MOSFETs - Engineer News Network\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2022\\\/08\\\/7395_LR.jpg\",\"datePublished\":\"2022-09-01T08:30:00+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#\\\/schema\\\/person\\\/4477342aea8e299c6a21761e513ea8e1\"},\"breadcrumb\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/#breadcrumb\"},\"inLanguage\":\"en-GB\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-GB\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/#primaryimage\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2022\\\/08\\\/7395_LR.jpg\",\"contentUrl\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2022\\\/08\\\/7395_LR.jpg\",\"width\":2100,\"height\":1500,\"caption\":\"Devices will enhance efficiency and reduce size in industrial applications\"},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/third-generation-650v-silicon-carbide-sic-mosfets\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Third generation 650V silicon carbide (SiC) MOSFETs\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#website\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/\",\"name\":\"Engineer News Network\",\"description\":\"The ultimate online news and information resource for today's engineer\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-GB\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#\\\/schema\\\/person\\\/4477342aea8e299c6a21761e513ea8e1\",\"name\":\"admin\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/author\\\/admin\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"Third generation 650V silicon carbide (SiC) MOSFETs - Engineer News Network","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/","og_locale":"en_GB","og_type":"article","og_title":"Third generation 650V silicon carbide (SiC) MOSFETs - Engineer News Network","og_description":"Toshiba Electronics Europe has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment.\u00a0 These highly efficient and versatile products will be used in a variety of demanding applications, including switch mode power supplies (SMPS) and uninterruptible power supplies (UPS) for servers, data centres and communication equipment. They will &hellip;","og_url":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/","og_site_name":"Engineer News Network","article_published_time":"2022-09-01T08:30:00+00:00","og_image":[{"width":2100,"height":1500,"url":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2022\/08\/7395_LR.jpg","type":"image\/jpeg"}],"author":"admin","twitter_card":"summary_large_image","twitter_misc":{"Written by":"admin","Estimated reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/#article","isPartOf":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/"},"author":{"name":"admin","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#\/schema\/person\/4477342aea8e299c6a21761e513ea8e1"},"headline":"Third generation 650V silicon carbide (SiC) MOSFETs","datePublished":"2022-09-01T08:30:00+00:00","mainEntityOfPage":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/"},"wordCount":246,"image":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/#primaryimage"},"thumbnailUrl":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2022\/08\/7395_LR.jpg","keywords":["650V silicon carbide","MOSFETs","SiC","Toshiba","TW015N65C","TW027N65C","TW048N65C","TW083N65C","TW107N65C"],"articleSection":["Electronics"],"inLanguage":"en-GB"},{"@type":"WebPage","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/","url":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/","name":"Third generation 650V silicon carbide (SiC) MOSFETs - Engineer News Network","isPartOf":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#website"},"primaryImageOfPage":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/#primaryimage"},"image":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/#primaryimage"},"thumbnailUrl":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2022\/08\/7395_LR.jpg","datePublished":"2022-09-01T08:30:00+00:00","author":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#\/schema\/person\/4477342aea8e299c6a21761e513ea8e1"},"breadcrumb":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/#breadcrumb"},"inLanguage":"en-GB","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/"]}]},{"@type":"ImageObject","inLanguage":"en-GB","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/#primaryimage","url":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2022\/08\/7395_LR.jpg","contentUrl":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2022\/08\/7395_LR.jpg","width":2100,"height":1500,"caption":"Devices will enhance efficiency and reduce size in industrial applications"},{"@type":"BreadcrumbList","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/third-generation-650v-silicon-carbide-sic-mosfets\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.engineernewsnetwork.com\/blog\/"},{"@type":"ListItem","position":2,"name":"Third generation 650V silicon carbide (SiC) MOSFETs"}]},{"@type":"WebSite","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#website","url":"https:\/\/www.engineernewsnetwork.com\/blog\/","name":"Engineer News Network","description":"The ultimate online news and information resource for today's engineer","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.engineernewsnetwork.com\/blog\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-GB"},{"@type":"Person","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#\/schema\/person\/4477342aea8e299c6a21761e513ea8e1","name":"admin","url":"https:\/\/www.engineernewsnetwork.com\/blog\/author\/admin\/"}]}},"_links":{"self":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts\/22909","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/comments?post=22909"}],"version-history":[{"count":1,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts\/22909\/revisions"}],"predecessor-version":[{"id":22911,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts\/22909\/revisions\/22911"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/media\/22910"}],"wp:attachment":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/media?parent=22909"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/categories?post=22909"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/tags?post=22909"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}