{"id":25575,"date":"2023-07-12T09:00:00","date_gmt":"2023-07-12T08:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=25575"},"modified":"2023-07-06T15:36:52","modified_gmt":"2023-07-06T14:36:52","slug":"600v-discrete-igbts-for-class-leading-efficiency-in-power-applications","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/600v-discrete-igbts-for-class-leading-efficiency-in-power-applications\/","title":{"rendered":"600V discrete IGBTs for class-leading efficiency in power applications"},"content":{"rendered":"\n

Nexperia<\/a><\/strong> launches its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements. These enable higher power density in power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20kW (20kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, EV-charging, and induction heating and welding.<\/p>\n\n\n\n

IGBT is a relatively mature technology. Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle (EV) chargers. Nexperia’s 600V IGBTs feature a robust, cost-effective carrier-stored trench-gate advanced field-stop (FS) construction, providing exceptionally low conduction and switching loss performance with high levels of ruggedness in operating temperatures up to 175\u00b0C. This improves the efficiency and reliability of power inverters, induction heaters, welding equipment and industrial applications like motor drives and servos, robotics, elevators, operating grippers, and in-line manufacturing.<\/p>\n\n\n\n

Designers can choose between the medium-speed (M3) and high-speed (H3) series IGBTs. These IGBTs have been designed with very tight parameter distributions, allowing multiple devices to connect safely in parallel. In addition, lower thermal resistance than competing devices enables them to provide higher output power. These IGBTs are also fully rated as soft fast reverse-recovery diodes. This means they are suitable for rectifier and bi-directional circuit applications or to protect against overcurrent conditions.<\/p>\n\n\n\n

These IGBTs are available in a standard, lead-free, TO247-3L package and are HV-H3TRB qualified for outdoor applications. Nexperia plans to follow this release with a series of 1200V IGBTs.<\/p>\n","protected":false},"excerpt":{"rendered":"

Nexperia launches its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements. These enable higher power density …<\/p>\n","protected":false},"author":1,"featured_media":25576,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[11799,9860,11798,11800],"class_list":["post-25575","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-igbt","tag-nexperia","tag-ngw30t60m3df","tag-nsulated-gate-bipolar-transistor"],"yoast_head":"\n600V discrete IGBTs for class-leading efficiency in power applications - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/600v-discrete-igbts-for-class-leading-efficiency-in-power-applications\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"600V discrete IGBTs for class-leading efficiency in power applications - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Nexperia launches its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30A NGW30T60M3DF. 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