{"id":28341,"date":"2024-10-03T09:00:00","date_gmt":"2024-10-03T08:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=28341"},"modified":"2024-09-25T15:30:27","modified_gmt":"2024-09-25T14:30:27","slug":"1200v-sic-schottky-barrier-diodes-achieve-typical-low-forward-voltage-of-1-27v","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/1200v-sic-schottky-barrier-diodes-achieve-typical-low-forward-voltage-of-1-27v\/","title":{"rendered":"1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V"},"content":{"rendered":"\n

Toshiba enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). The TRSxxx120Hx series<\/a><\/strong>, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies.<\/p>\n\n\n\n

By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows a very low forward voltage (VF) of just 1.27V (typ). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high current conditions. The TRS40N120H of the new series accepts a forward DC current (IF(DC)) of 40A (max) and a non-repetitive peak forward surge current (IFSM) of 270A (max), with the maximum case temperature (TC) of all devices being +175\u00b0C.<\/p>\n\n\n\n

Combined with the lower capacitive charge and leakage current, the products help improve system efficiency and simplify thermal design. For instance, at a reverse voltage (VR) of 1200V, the TRS20H120H diode housed in the TO-247-2L package provides a total capacitive charge (QC) of 109nC and reverse current (IR) of 2\u00b5A.<\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies. By implementing an …<\/p>\n","protected":false},"author":1,"featured_media":28342,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[4413,13137,94,13136],"class_list":["post-28341","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-sic","tag-silicon-carbide-diodes","tag-toshiba","tag-trsxxx120hx-series"],"yoast_head":"\n1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/1200v-sic-schottky-barrier-diodes-achieve-typical-low-forward-voltage-of-1-27v\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Toshiba enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). 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