{"id":2934,"date":"2017-11-29T09:33:17","date_gmt":"2017-11-29T09:33:17","guid":{"rendered":"https:\/\/engineernewsnetwork.com\/blog\/?p=2934"},"modified":"2017-11-29T09:33:17","modified_gmt":"2017-11-29T09:33:17","slug":"transistors-improve-flicker-noise-up-to-a-factor-of-10","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/transistors-improve-flicker-noise-up-to-a-factor-of-10\/","title":{"rendered":"Transistors improve flicker noise up to a factor of 10"},"content":{"rendered":"X-FAB<\/a><\/span> announces the expansion of its low-noise transistor portfolio based on the company\u2019s proprietary 180nm XH018 mixed-signal CMOS technology.<\/p>\n

Three new transistors are now available: a 1.8V low-noise NMOS, a 3.3V low-noise NMOS and a 3.3V low-noise PMOS \u2013 all of which offer drastically reduced flicker noise compared to standard CMOS offerings.<\/p>\n

These transistors are mainly designed for sensor deployments which require very low-noise signal amplification to achieve high signal-to-noise ratio (SNR).<\/p>\n

\"\"<\/a>Among the key target applications are analog and digital microphone amplifiers, which are widely used in mobile phones and headsets, as well as implantable medical devices, such as pacemakers.<\/p>\n

The new 1.8 V low-noise NMOS transistor introduced by X-FAB delivers an improvement factor of eight times lower flicker noise compared to the standard XH018 device.<\/p>\n

The new 3.3 V low-noise NMOS transistor gives up to ten times lower flicker noise, while the flicker noise for the 3.3 V low-noise PMOS transistor that complements it is halved for all drain currents.<\/p>\n

Flicker noise, also known as 1\/f noise, is the dominant noise at low frequencies, between 1Hz to 1MHz.<\/p>\n

For applications working in this spectrum, it is important that the flicker noise is kept to a minimal level.
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