{"id":29676,"date":"2025-07-15T09:00:00","date_gmt":"2025-07-15T08:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=29676"},"modified":"2025-07-10T10:23:35","modified_gmt":"2025-07-10T09:23:35","slug":"1200-v-sic-schottky-diodes-for-power-intense-infrastructure","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/1200-v-sic-schottky-diodes-for-power-intense-infrastructure\/","title":{"rendered":"1200 V SiC Schottky diodes for power-intense infrastructure"},"content":{"rendered":"\n

Nexperia announces the addition of two 1200V 20A silicon carbide (SiC) Schottky diodes to its portfolio of power electronics components.<\/p>\n\n\n\n

The\u00a0PSC20120J<\/strong><\/a>\u00a0and\u00a0PSC20120L<\/strong><\/a>\u00a0have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.<\/p>\n\n\n\n

These new Schottky diodes deliver leading-edge performance through temperature-independent capacitive switching and zero recovery behavior that delivers an outstanding figure-of-merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of these devices provides additional benefits, such as outstanding robustness against surge currents as evidenced by their high peak-forward current (IFSM). This feature mitigates the requirement for additional protection circuitry, thereby significantly reducing system complexity and enabling engineers to achieve higher efficiency using smaller form factors in rugged high-voltage applications.<\/p>\n\n\n\n

This\u00a0PSC20120J<\/strong><\/a>\u00a0is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device (SMD) power plastic package, while the\u00a0PSC20120L<\/strong><\/a>\u00a0is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages enhance device reliability in high-voltage applications at operating temperatures up to 175\u00b0C. <\/p>\n","protected":false},"excerpt":{"rendered":"

Nexperia announces the addition of two 1200V 20A silicon carbide (SiC) Schottky diodes to its portfolio of power electronics components. The\u00a0PSC20120J\u00a0and\u00a0PSC20120L\u00a0have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial …<\/p>\n","protected":false},"author":1,"featured_media":29677,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[9860],"class_list":["post-29676","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-nexperia"],"yoast_head":"\n1200 V SiC Schottky diodes for power-intense infrastructure - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/1200-v-sic-schottky-diodes-for-power-intense-infrastructure\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"1200 V SiC Schottky diodes for power-intense infrastructure - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Nexperia announces the addition of two 1200V 20A silicon carbide (SiC) Schottky diodes to its portfolio of power electronics components. The\u00a0PSC20120J\u00a0and\u00a0PSC20120L\u00a0have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. 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