{"id":30116,"date":"2025-09-30T09:00:00","date_gmt":"2025-09-30T08:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=30116"},"modified":"2025-09-25T11:17:42","modified_gmt":"2025-09-25T10:17:42","slug":"100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/","title":{"rendered":"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process"},"content":{"rendered":"\n<p>Toshiba has launched the <strong><a href=\"https:\/\/toshiba.semicon-storage.com\/eu\/semiconductor\/product\/mosfets\/12v-300v-mosfets\/detail.TPH2R70AR5.html\">TPH2R70AR5<\/a><\/strong>, a new 100V-rated N-channel power MOSFET fabricated with its latest-generation process, known as U-MOS11-H. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC-DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment.<\/p>\n\n\n\n<p>Due to the advanced 100V U-MOS11-H process, the TPH2R70AR5 offers significant performance advantages over devices manufactured with the existing U-MOSX-H process. For example, compared to the earlier TPH3R10AQM, the drain-source on-resistance (R<sub>DS(ON)<\/sub>) has reduced by around 8% to just 2.7m\u03a9 (max.) while the total gate charge (Q<sub>g<\/sub>) is now 37% lower at 52nC (typ.). The R<sub>DS(ON)<\/sub>&nbsp;x&nbsp;Q<sub>g&nbsp;<\/sub>figure-of-merit (FoM) is therefore improved by 42%.<\/p>\n\n\n\n<p>In addition, the TPH2R70AR5 achieves high-speed body diode performance through the application of lifetime control technology. As a result, compared to the TPH3R10AQM, switching speed is improved and, additionally, the diode recovery time and noise are reduced. Lifetime control technology also reduces reverse recovery charge (Q<sub>rr<\/sub>) to 55nC (typ.) and suppresses voltage spikes. The R<sub>DS(ON)<\/sub>&nbsp;x&nbsp;Q<sub>rr&nbsp;<\/sub>FoM is improved by around 43%.<\/p>\n\n\n\n<p>The prominent R<sub>DS(ON)<\/sub>, Q<sub>g<\/sub>, and Q<sub>rr<\/sub>&nbsp;characteristics reduce both conduction and switching losses, contributing to higher efficiency in power-related applications. This reduces the operating cost and permits greater power density. Housed in the SOP Advance (N) package measuring just 5.15mm x 6.1mm, the device offers excellent mounting compatibility with industry standards.<\/p>\n\n\n\n<p>The new TPH2R70AR5 is rated for a maximum drain current (I<sub>D<\/sub>) of 190A at an ambient temperature of 25\u00b0C. The device is capable of operating with a channel temperature (T<sub>ch<\/sub>) up to 175\u00b0C, thereby reducing the need for cooling measures.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET fabricated with its latest-generation process, known as U-MOS11-H. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC-DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. Due to the advanced &hellip;<\/p>\n","protected":false},"author":1,"featured_media":30117,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[94,13881],"class_list":["post-30116","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-toshiba","tag-tph2r70ar5"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m\u03c9-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Toshiba has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET fabricated with its latest-generation process, known as U-MOS11-H. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC-DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. Due to the advanced &hellip;\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m\u03c9-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/\" \/>\n<meta property=\"og:site_name\" content=\"Engineer News Network\" \/>\n<meta property=\"article:published_time\" content=\"2025-09-30T08:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2025\/09\/7640_LR.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"2100\" \/>\n\t<meta property=\"og:image:height\" content=\"1500\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"admin\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"admin\" \/>\n\t<meta name=\"twitter:label2\" content=\"Estimated reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/\"},\"author\":{\"name\":\"admin\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#\\\/schema\\\/person\\\/4477342aea8e299c6a21761e513ea8e1\"},\"headline\":\"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process\",\"datePublished\":\"2025-09-30T08:00:00+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/\"},\"wordCount\":307,\"image\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2025\\\/09\\\/7640_LR.jpg\",\"keywords\":[\"Toshiba\",\"TPH2R70AR5\"],\"articleSection\":[\"Electronics\"],\"inLanguage\":\"en-GB\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/\",\"name\":\"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process - Engineer News Network\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2025\\\/09\\\/7640_LR.jpg\",\"datePublished\":\"2025-09-30T08:00:00+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#\\\/schema\\\/person\\\/4477342aea8e299c6a21761e513ea8e1\"},\"breadcrumb\":{\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/#breadcrumb\"},\"inLanguage\":\"en-GB\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-GB\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/#primaryimage\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2025\\\/09\\\/7640_LR.jpg\",\"contentUrl\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/wp-content\\\/uploads\\\/2025\\\/09\\\/7640_LR.jpg\",\"width\":2100,\"height\":1500,\"caption\":\"Enhances performance and efficiency in switched-mode power supplies for industrial equipment with improved figure-of-merit (RDS(ON) x Qg)\"},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#website\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/\",\"name\":\"Engineer News Network\",\"description\":\"The ultimate online news and information resource for today's engineer\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-GB\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/#\\\/schema\\\/person\\\/4477342aea8e299c6a21761e513ea8e1\",\"name\":\"admin\",\"url\":\"https:\\\/\\\/www.engineernewsnetwork.com\\\/blog\\\/author\\\/admin\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process - Engineer News Network","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m\u03c9-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/","og_locale":"en_GB","og_type":"article","og_title":"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process - Engineer News Network","og_description":"Toshiba has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET fabricated with its latest-generation process, known as U-MOS11-H. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC-DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. Due to the advanced &hellip;","og_url":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m\u03c9-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/","og_site_name":"Engineer News Network","article_published_time":"2025-09-30T08:00:00+00:00","og_image":[{"width":2100,"height":1500,"url":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2025\/09\/7640_LR.jpg","type":"image\/jpeg"}],"author":"admin","twitter_card":"summary_large_image","twitter_misc":{"Written by":"admin","Estimated reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/#article","isPartOf":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/"},"author":{"name":"admin","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#\/schema\/person\/4477342aea8e299c6a21761e513ea8e1"},"headline":"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process","datePublished":"2025-09-30T08:00:00+00:00","mainEntityOfPage":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/"},"wordCount":307,"image":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/#primaryimage"},"thumbnailUrl":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2025\/09\/7640_LR.jpg","keywords":["Toshiba","TPH2R70AR5"],"articleSection":["Electronics"],"inLanguage":"en-GB"},{"@type":"WebPage","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/","url":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/","name":"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process - Engineer News Network","isPartOf":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#website"},"primaryImageOfPage":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/#primaryimage"},"image":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/#primaryimage"},"thumbnailUrl":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2025\/09\/7640_LR.jpg","datePublished":"2025-09-30T08:00:00+00:00","author":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#\/schema\/person\/4477342aea8e299c6a21761e513ea8e1"},"breadcrumb":{"@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/#breadcrumb"},"inLanguage":"en-GB","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/"]}]},{"@type":"ImageObject","inLanguage":"en-GB","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/#primaryimage","url":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2025\/09\/7640_LR.jpg","contentUrl":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-content\/uploads\/2025\/09\/7640_LR.jpg","width":2100,"height":1500,"caption":"Enhances performance and efficiency in switched-mode power supplies for industrial equipment with improved figure-of-merit (RDS(ON) x Qg)"},{"@type":"BreadcrumbList","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/100v-n-channel-power-mosfet-offering-2-7m%cf%89-in-5-15mm-x-6-1mm-package-based-on-u-mos11-h-process\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.engineernewsnetwork.com\/blog\/"},{"@type":"ListItem","position":2,"name":"100V N-channel power MOSFET offering 2.7m\u03a9\u00a0in\u00a05.15mm x 6.1mm\u00a0package based on U-MOS11-H process"}]},{"@type":"WebSite","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#website","url":"https:\/\/www.engineernewsnetwork.com\/blog\/","name":"Engineer News Network","description":"The ultimate online news and information resource for today's engineer","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.engineernewsnetwork.com\/blog\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-GB"},{"@type":"Person","@id":"https:\/\/www.engineernewsnetwork.com\/blog\/#\/schema\/person\/4477342aea8e299c6a21761e513ea8e1","name":"admin","url":"https:\/\/www.engineernewsnetwork.com\/blog\/author\/admin\/"}]}},"_links":{"self":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts\/30116","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/comments?post=30116"}],"version-history":[{"count":1,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts\/30116\/revisions"}],"predecessor-version":[{"id":30118,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/posts\/30116\/revisions\/30118"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/media\/30117"}],"wp:attachment":[{"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/media?parent=30116"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/categories?post=30116"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.engineernewsnetwork.com\/blog\/wp-json\/wp\/v2\/tags?post=30116"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}