{"id":31025,"date":"2026-02-09T09:00:00","date_gmt":"2026-02-09T09:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=31025"},"modified":"2026-01-28T08:49:21","modified_gmt":"2026-01-28T08:49:21","slug":"embedded-flash-memory-devices-for-high-capacity-mobile-storage","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/embedded-flash-memory-devices-for-high-capacity-mobile-storage\/","title":{"rendered":"Embedded Flash memory devices for high-capacity mobile storage"},"content":{"rendered":"\n<p><strong>\u00a0<\/strong><a href=\"https:\/\/email.cisionone.cision.com\/c\/eJwszLuO6yAQANCvgY6IGQ-vgiJNfiPCMNwgv3KxtY7261debXuKUyL6TFpyBGeD8Q4R5Ssao7m6nGn0xhLkalA7ZA2eEozOyhZtcCGjdlC9LU-AgkYPIQRBem-Fp_ZfLanN3HdVrRvHYlxVH_v-Hm-Xyzm-juMthrvAh8DHeZ63qW2flm55WwQ-5MKlJdV55rSzaiX-wvMPxHBH8FqD7LGtdROkef3XVua-8rmvfJxbn65L7kdnXq4hs0lJV1K1BKMoVVDJEinnyfhqU8kwyK-IPwEAAP__k45VSw\" target=\"_blank\" rel=\"noreferrer noopener\"><strong>KIOXIA<\/strong><\/a>\u00a0Europe announces that KIOXIA has begun sampling new Universal Flash Storage\u00a0(UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications\u00a0and high-capacity storage needs, the new devices are powered by KIOXIA&#8217;s 8<sup>th<\/sup>\u00a0generation BiCS FLASH\u00a03D flash memory technology.<\/p>\n\n\n\n<p>QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance.<\/p>\n\n\n\n<p>Building on these advancements, the new KIOXIA devices achieve substantial performance increases. KIOXIA&#8217;s QLC UFS boosts sequential write speeds by 25%, random read speeds by 90%, and random write speeds by 95% compared to the previous generation (UFS 4.0 \/ BiCS6 QLC UFS). Write Amplification Factor (WAF) is also improved by max. 3.5\u00d7 (with WriteBooster disabled).<\/p>\n\n\n\n<p>Well-suited for smartphones and tablets, KIOXIA QLC UFS also supports emerging product categories that demand higher capacity and performance, including PCs, networking, AR\/VR, IoT, and AI-enabled devices.<\/p>\n\n\n\n<p>Available in 512-gigabyte (GB) and 1-terabyte (TB) capacities, the new UFS 4.1 devices combine KIOXIA&#8217;s advanced BiCS FLASH\u00a03D flash memory and an integrated controller in a JEDEC<sup>\u00a0<\/sup>-standard package. KIOXIA&#8217;s 8th generation BiCS FLASH\u00a03D flash memory introduces\u00a0CMOS directly Bonded to Array (CBA) technology &#8211; an architectural innovation that marks a step-change in flash memory design.<\/p>\n\n\n\n<p><strong>Key features include:<\/strong><\/p>\n\n\n\n<p>\u25cf&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;Compliant with the UFS 4.1 specification. UFS 4.1 is backward-compatible with UFS 4.0 and UFS 3.1.<\/p>\n\n\n\n<p>\u25cf\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a08th generation KIOXIA BiCS FLASH\u00a03D flash memory<\/p>\n\n\n\n<p>\u25cf&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;WriteBooster support for significantly faster write speeds<\/p>\n\n\n\n<p>\u25cf\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0Reduced package size compared to the previous QLC UFS: 11\u00d713 mm \u2192 9\u00d713 mm.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>\u00a0KIOXIA\u00a0Europe announces that KIOXIA has begun sampling new Universal Flash Storage\u00a0(UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications\u00a0and high-capacity storage needs, the new devices are powered by KIOXIA&#8217;s 8th\u00a0generation BiCS FLASH\u00a03D flash memory technology. QLC UFS offers a higher bit density than traditional TLC UFS, making it &hellip;<\/p>\n","protected":false},"author":1,"featured_media":31026,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[9964,14326],"class_list":["post-31025","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-kioxia","tag-qlc-ufs-4-1-embedded-flash-memory-devices"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Embedded Flash memory devices for high-capacity mobile storage - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/embedded-flash-memory-devices-for-high-capacity-mobile-storage\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Embedded Flash memory devices for high-capacity mobile storage - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"\u00a0KIOXIA\u00a0Europe announces that KIOXIA has begun sampling new Universal Flash Storage\u00a0(UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. 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