Toshiba has added the DTMOSVI 600V HSD (High-Speed Diode) N-channel power MOSFETs to the DTMOSVI 600V Series featuring a super junction structure. The seven new products are available in TO-247, TOLL, and DFN8\u00d78 packages, providing engineers with options that balance power handling, thermal performance, switching efficiency, and system miniaturisation capabilities for diverse application needs. A product highlight is the TK058V60Z5, which achieves an ultra-low drain-source on-resistance (RDS(ON)) of 0.050\u03a9 (typ.) in a DFN8\u00d78 package. Applications include switched-mode power supplies (SMPS) for data center servers, uninterruptible power supplies (UPS), and photovoltaic power conditioners.<\/p>\n\n\n\n
The new products employ lifetime control technology, which intentionally introduces defects into the diode to enhance carrier recombination speed. This technique enhances the reverse-recovery performance of the body diode, a critical requirement for bridge and inverter circuit applications. Compared to Toshiba’s existing DTMOSVI 600V series without a built-in high-speed recovery diode, the reverse recovery time (trr) has been reduced by approximately 60%, and the reverse recovery charge (Qrr) by approximately 85% (measurement conditions: VDD=400V, VGS=0V, IDR=20A, -dIDR\/dt= 100 A\/\u03bcs, Ta=25\u00b0C).<\/p>\n\n\n\n
In the DTMOSVI 600V series, including the new products, Toshiba’s optimised gate design and process reduce the figure of merit drain-to-source on-resistance (RDS(ON)) times total gate charge (Qg) by approximately 36%, and RDS(ON) times the gate-to-drain charge (Qgd) by approximately 52% compared to Toshiba’s previous generation, the DTMOSIV-H series with the same voltage rating. As a result, conduction, drive, and switching losses are reduced, contributing to higher efficiency in power supply circuits.<\/p>\n\n\n\n
Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which quickly verifies circuit functionality, highly accurate G2 SPICE models that reproduce transient characteristics are now available. Toshiba’s Online Circuit Simulator enables engineers to verify circuit operation without the hassle of building a simulation environment and downloading element models.<\/p>\n\n\n\n
Toshiba will continue expanding its DTMOSVI series lineup to improve the efficiency of switched-mode power supplies for industrial equipment, aiming to achieve carbon neutrality.<\/p>\n\n\n\n
For more information: TK034N60Z5<\/a>,\u00a0TK055N60Z5<\/a>,\u00a0TK073N60Z5<\/a>,\u00a0TK055U60Z5<\/a>,\u00a0TK073U60Z5<\/a>,\u00a0TK077V60Z5<\/a>,\u00a0TK058V60Z5<\/a><\/strong><\/p>\n","protected":false},"excerpt":{"rendered":" Toshiba has added the DTMOSVI 600V HSD (High-Speed Diode) N-channel power MOSFETs to the DTMOSVI 600V Series featuring a super junction structure. The seven new products are available in TO-247, TOLL, and DFN8\u00d78 packages, providing engineers with options that balance power handling, thermal performance, switching efficiency, and system miniaturisation capabilities for diverse application needs. A …<\/p>\n","protected":false},"author":1,"featured_media":31641,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[14605,14609,14607,14608,14612,14610,14606,14611,94],"class_list":["post-31640","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-dtmosvi-600v","tag-tk034n60z5","tag-tk055n60z5","tag-tk055u60z5","tag-tk058v60z5","tag-tk073n60z5","tag-tk073u60z5","tag-tk077v60z5","tag-toshiba"],"yoast_head":"\n