{"id":31733,"date":"2026-04-01T09:15:00","date_gmt":"2026-04-01T08:15:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=31733"},"modified":"2026-03-31T17:42:20","modified_gmt":"2026-03-31T16:42:20","slug":"40v-0-67m%cf%89-n-channel-mosfet-to-enhance-power-supply-efficiency","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/40v-0-67m%cf%89-n-channel-mosfet-to-enhance-power-supply-efficiency\/","title":{"rendered":"40V, 0.67m\u03a9 N-channel MOSFET to enhance power supply efficiency"},"content":{"rendered":"\n<p>Toshiba introduces the <a href=\"https:\/\/cisionone-email.pretzl.com\/c\/eJxEzruK3TAQxvGnkToZaXR1oWIbkyJFWNIvuozXYm1rI-n4vH5wOJBu-P1h-LKfk-aRohfWqlk5pRTdvJawrs4k0CEHI9aQjEQHxqaZJ8sDLd7MKbqMwoTVqQ9hlRbOWOd0JIr3kvGr_GFHKDu2znQ0SVln5sja1U493YHufhvjuxP5RmAhsIzatxLD1PEoqZ6sj9rCJ06pHgQWfBBYXik_0qiNwPLd6n0TWI7aVxydwCLgYpLzi_2njCOUffr968e7sVy9_5y2cez0wFwCa7hj6MhK9v_g4wVEvoFWygrafDnXShTH87OciO3EZz9xPGv7utfRPhricX9wQVoh-cwMSsmUWBWbs-AMY-TOASQJkl4e_gYAAP__S-V3Jw\" target=\"_blank\" rel=\"noreferrer noopener\"><strong>TPHR6704RL<\/strong><\/a>, a 40V N-channel power MOSFET fabricated using its latest-generation U-MOS11-H process. The device is optimised for switched-mode power supplies used in data centers, as well as industrial equipment such high-efficiency DC-DC converters, switching voltage regulators, and motor drivers.<\/p>\n\n\n\n<p>By adopting the U-MOS11-H process, the TPHR6704RL achieves a typical drain-source on-resistance (R<sub>DS(ON)<\/sub>) of 0.52m\u03a9 at a gate-source voltage (V<sub>GS<\/sub>) of 10V, and a maximum R<sub>DS(ON)<\/sub>&nbsp;of 0.67m\u03a9 at a V<sub>GS<\/sub>&nbsp;of 10V. Compared to the existing 40V product (TPHR8504PL) manufactured using the U-MOS IX-H process, the R<sub>DS(ON)<\/sub>&nbsp;is approximately 21% lower. In addition, the switching performance of the new device improves, with a typical total gate charge (Q<sub>g<\/sub>) of 88nC and a gate switch charge (Q<sub>SW<\/sub>) of 24nC, resulting in a reduction in the R<sub>DS(ON)<\/sub>&nbsp;\u00d7 Q<sub>g<\/sub>&nbsp;figure-of-merit by approximately 37%, enabling low-loss operation.<\/p>\n\n\n\n<p>TPHR6704RL will help designers to reduce EMI in switched-mode power supplies by minimising voltage spikes generated between the drain and source during switching.<\/p>\n\n\n\n<p>The TPHR6704RL also offers robust current and thermal performance, with a drain current (I<sub>D<\/sub>) rating of up to 420A and a channel-to-case thermal resistance of 0.71\u00b0C\/W at 25\u00b0C, enabling stable operation under high-load conditions. The device operates over a wide temperature range, with a maximum channel temperature (T<sub>ch<\/sub>) of 175\u00b0C, supporting reliable operation in demanding industrial environments.<\/p>\n\n\n\n<p>Housed in the SOP Advance (N) package, the device offers high footprint compatibility with existing SOP Advance designs, simplifying replacement and board-level upgrades.<\/p>\n\n\n\n<p>To support efficient power supply design, Toshiba offers a comprehensive set of circuit design tools. In addition to the G0 SPICE model for rapid functional verification, high-accuracy G2 SPICE models are available to accurately reproduce transient and switching characteristics, helping designers optimise efficiency, EMI, and thermal performance.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba introduces the TPHR6704RL, a 40V N-channel power MOSFET fabricated using its latest-generation U-MOS11-H process. The device is optimised for switched-mode power supplies used in data centers, as well as industrial equipment such high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. By adopting the U-MOS11-H process, the TPHR6704RL achieves a typical drain-source on-resistance (RDS(ON)) &hellip;<\/p>\n","protected":false},"author":1,"featured_media":31734,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[94,14649],"class_list":["post-31733","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-toshiba","tag-tphr6704rl"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>40V, 0.67m\u03a9 N-channel MOSFET to enhance power supply efficiency - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/40v-0-67m\u03c9-n-channel-mosfet-to-enhance-power-supply-efficiency\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"40V, 0.67m\u03a9 N-channel MOSFET to enhance power supply efficiency - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Toshiba introduces the TPHR6704RL, a 40V N-channel power MOSFET fabricated using its latest-generation U-MOS11-H process. The device is optimised for switched-mode power supplies used in data centers, as well as industrial equipment such high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. 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