{"id":32819,"date":"2026-07-06T09:00:00","date_gmt":"2026-07-06T08:00:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=32819"},"modified":"2026-06-30T11:36:05","modified_gmt":"2026-06-30T10:36:05","slug":"1-4m%cf%89-80v-n-channel-power-mosfet-for-high-efficiency-industrial-power-equipment","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/1-4m%cf%89-80v-n-channel-power-mosfet-for-high-efficiency-industrial-power-equipment\/","title":{"rendered":"1.4m\u03a9 80V N-channel power MOSFET for high efficiency industrial power equipment"},"content":{"rendered":"\n

Toshiba has introduced the TPM1R408RH<\/strong><\/a>, an 80V N-channel power MOSFET based on the company’s latest U-MOS11-H process technology. Designed for high-efficiency industrial switched-mode power supplies for data centre and communications base station equipment, the new device combines ultra-low on-resistance (RDS(ON)<\/sub>) with fast switching performance to help designers improve system efficiency and reduce power losses.<\/p>\n\n\n\n

Compared with the TPM1R908QM, an 80V product with the previous-generation U-MOS X-H process, the TPM1R408RH achieves approximately 26% lower RDS(ON)<\/sub> of 1.4m\u03a9 (max.) at a gate-source voltage (VGS<\/sub>) of 10V and drain current (ID<\/sub>) of 50A, helping to minimise conduction losses in demanding power designs.<\/p>\n\n\n\n

To further improve efficiency, the new MOSFET improves the trade-off between RDS(ON)<\/sub>\u00a0and total gate charge (Qg), achieving 80nC. <\/p>\n\n\n\n

The figure-of-merit (FOM) [RDS(ON)<\/sub>\u00a0\u00d7 Qg] is approximately 45% lower (1.4m\u03a9\u00a0x\u00a080nC\u00a0=\u00a0112m\u03a9\u00b7nC) compared with the TPM1R908QM (1.9m\u03a9\u00a0x\u00a0108nC = 205.2m\u03a9\u00b7nC). These characteristics reduce switching losses and suppress spike voltage generated between the drain and source during switching, helping to reduce electromagnetic interference (EMI) and enable high-speed switching in switched mode power supplies (SMPS).<\/p>\n\n\n\n

The TPM1R408RH supports a drain-source voltage of 80V and a maximum drain current (ID<\/sub>) of 288A (Tc = 25\u00b0C), making it suitable for high-current industrial applications. The device is housed in Toshiba’s compact SOP Advance(E) package, which reduces package resistance by approximately 65% and thermal resistance by approximately 15% compared with the existing SOP Advance(N) package, supporting space-efficient system designs.<\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba has introduced the TPM1R408RH, an 80V N-channel power MOSFET based on the company’s latest U-MOS11-H process technology. Designed for high-efficiency industrial switched-mode power supplies for data centre and communications base station equipment, the new device combines ultra-low on-resistance (RDS(ON)) with fast switching performance to help designers improve system efficiency and reduce power losses. Compared …<\/p>\n","protected":false},"author":1,"featured_media":32820,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[94,15140],"class_list":["post-32819","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-toshiba","tag-u-mos11-h"],"yoast_head":"\n1.4m\u03a9 80V N-channel power MOSFET for high efficiency industrial power equipment - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/1-4m\u03c9-80v-n-channel-power-mosfet-for-high-efficiency-industrial-power-equipment\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"1.4m\u03a9 80V N-channel power MOSFET for high efficiency industrial power equipment - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Toshiba has introduced the TPM1R408RH, an 80V N-channel power MOSFET based on the company’s latest U-MOS11-H process technology. Designed for high-efficiency industrial switched-mode power supplies for data centre and communications base station equipment, the new device combines ultra-low on-resistance (RDS(ON)) with fast switching performance to help designers improve system efficiency and reduce power losses. 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