{"id":33992,"date":"2026-10-08T09:15:00","date_gmt":"2026-10-08T08:15:00","guid":{"rendered":"https:\/\/www.engineernewsnetwork.com\/blog\/?p=33992"},"modified":"2026-10-07T16:07:39","modified_gmt":"2026-10-07T15:07:39","slug":"3300v-sic-mosfet-moduleoffers-high-surge-current-capability","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/3300v-sic-mosfet-moduleoffers-high-surge-current-capability\/","title":{"rendered":"3300V SiC MOSFET moduleoffers high surge-current capability"},"content":{"rendered":"\n<p class=\"wp-block-paragraph\">Toshiba announces the expansion of its line-up with the launch of<strong><a href=\"https:\/\/toshiba.semicon-storage.com\/eu\/semiconductor\/product\/mosfets\/sic-mosfet-modules\/detail.IX800FXF2YMS4.html\" type=\"link\" id=\"https:\/\/toshiba.semicon-storage.com\/eu\/semiconductor\/product\/mosfets\/sic-mosfet-modules\/detail.IX800FXF2YMS4.html\"> IX800FXF2YMS4<\/a><\/strong>, a dual SiC MOSFET module. <\/p>\n\n\n\n<p class=\"wp-block-paragraph\">The new module offers high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and industrial motor control equipment. It also helps improve system efficiency through reduced conduction and switching losses.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">The IX800FXF2YMS4 uses Toshiba&#8217;s improved third-generation silicon carbide (SiC) MOSFET devices. The module has a drain-source voltage (V<sub>DSS<\/sub>) rating of 3300V and a drain current (DC) rating (I<sub>D<\/sub>) of 800A.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">The new IX800FXF2YMS4 has an I<sup>2<\/sup>t rating of 300kA<sup>2<\/sup>s for its diode at initial channel temperature of 175\u00b0C, V<sub>GS<\/sub>=-6V, a single half-sinewave 10ms pulse, and F.R.=1%. This indicates the diode&#8217;s surge current capability under abnormal operating conditions. An optimised SiC MOSFET design enables this performance, helping to improve equipment reliability.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">In addition, the module&#8217;s low conduction and switching losses contribute to improved equipment efficiency and can help reduce cooling requirements. <\/p>\n\n\n\n<p class=\"wp-block-paragraph\">Typical drain-source on-voltage (sense) (V<sub>DS(on)sense<\/sub>) is 1.4V at I<sub>D<\/sub>=800A, V<sub>GS<\/sub>=+20V and T<sub>ch<\/sub>=25\u00b0C. Typical turn-on and turn-off switching losses (E<sub>on<\/sub> and E<sub>off<\/sub>) are 185mJ and 175mJ, respectively, at V<sub>DD<\/sub>=1800V, I<sub>D<\/sub>=800A and T<sub>ch<\/sub>=175\u00b0C.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">The new product is housed in the iXPLV (Intelligent Flexible Package Low Voltage) package, which uses silver (Ag) sintering die attach to improve heat resistance and reliability, supporting a channel temperature rating of 175\u00b0C. Its launch expands Toshiba&#8217;s line-up of SiC MOSFET modules in the iXPLV package to four products.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">Toshiba will continue to expand its line-up of SiC MOSFET modules for industrial equipment and provide a wider range of product options to meet various equipment specifications and applications. Toshiba will also contribute to improved reliability, higher efficiency and more compact industrial equipment.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba announces the expansion of its line-up with the launch of IX800FXF2YMS4, a dual SiC MOSFET module. The new module offers high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and &hellip;<\/p>\n","protected":false},"author":1,"featured_media":33993,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104],"tags":[15687,94],"class_list":["post-33992","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-electronics","tag-ix800fxf2yms4","tag-toshiba"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>3300V SiC MOSFET moduleoffers high surge-current capability - Engineer News Network<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/3300v-sic-mosfet-moduleoffers-high-surge-current-capability\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"3300V SiC MOSFET moduleoffers high surge-current capability - Engineer News Network\" \/>\n<meta property=\"og:description\" content=\"Toshiba announces the expansion of its line-up with the launch of IX800FXF2YMS4, a dual SiC MOSFET module. 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