{"id":3468,"date":"2017-12-19T08:55:52","date_gmt":"2017-12-19T08:55:52","guid":{"rendered":"https:\/\/engineernewsnetwork.com\/blog\/?p=3468"},"modified":"2017-12-19T09:05:55","modified_gmt":"2017-12-19T09:05:55","slug":"x-fab-introduce-eflash-block-optimised-for-energy-harvesting-and-iot-devices","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/x-fab-introduce-eflash-block-optimised-for-energy-harvesting-and-iot-devices\/","title":{"rendered":"X-FAB introduce eFlash block optimised for energy harvesting and IoT devices"},"content":{"rendered":"X-FAB<\/a><\/span> today announced the availability of two new Non-Volatile Memory (NVM) IP solutions – a low power embedded Flash (eFlash) IP block and a NVRAM compiler.<\/p>\n

Both are based on the company\u2019s proprietary 180 nm XH018 mixed-signal CMOS technology and are targeted at applications requiring high reliability and field re-programmability while operating at low power and in harsh environments.<\/p>\n

The 128-kbit eFlash, which is available as an 8 k x 16-bit IP block is based on Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Flash technology.<\/p>\n

X-FAB has built up extensive experience and manufacturing excellence in integrating SONOS memories with conventional CMOS processes, ensuring high levels of data reliability.<\/p>\n

The IP block has been designed for low power mixed-signal applications and features a deep power down stand-by mode consuming a maximum of only 50nA.<\/p>\n

\"\"<\/a>The new\u00a0X-FAB eFlash IP blockis targeted at replacing standalone NVM memories and embedded One-Time-Programmable (OTP) memories in low power applications, enabling onsite program code updates.<\/p>\n

This means that it is highly suited to energy harvesting and remotely located Internet-of-Things (IoT) devices, where power constraints and harsh environments need to be dealt with, but field re-programmability must be offered at a low cost.<\/p>\n

X-FAB has rigorously qualified the eFlash IP block to comply with the AEC-Q100 standard, so that it offers engineers an automotive-grade solution capable of operating across a temperature range of -40\u00b0C to 125\u00b0C.<\/p>\n

The SONOS technology enables reliable operation of the IP block when combined with high-voltage (HV) options ranging from 6 to 45V. This is made possible by the NMOS, PMOS and DMOS transistors available with X-FAB\u2019s 180 nm XH018 process. High field reliability is enabled with a number of test modes explicitly designed to test individual memory bit cell currents and achieve 0 PPM in the field.<\/p>\n

Finally, special test modes have been designed into the IP to optimise production testing and minimise test time and cost.<\/p>\n

With this latest release, X-FAB’s complements its existing NVM portfolio with this very low power option. Other available Flash blocks address automotive applications up to 175\u00b0C in read operation.<\/p>\n

Combining the fast read\/write speeds of a conventional SRAM with the non-volatility of an EEPROM, the\u00a0NVRAMcompiler facilitates generating and integrating memories from 1-kbits to 16-kbits in a wide range of applications requiring fail-safe memories.<\/p>\n

The contents of the SRAM can be backed up to the EEPROM memory resource in the event of a power failure. This proves to be a highly desirable feature for safety-critical applications – such as smart meters, industrial control devices or data transfer systems.<\/p>\n

The NVRAMs can be re-programmed up to 100,000 times at 35\u00b0C and up to 10,000 times at 175\u00b0C.<\/p>\n

NVRAM blocks generated by the compiler can retain data for up to 20 years without battery power in high temperature environments (125\u00b0C).<\/p>\n

Innovations in the test logic integrated with the NVRAM reduce the test time by avoiding time-consuming measurements for low currents, thereby reducing production test costs.
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