{"id":7548,"date":"2018-05-29T10:00:42","date_gmt":"2018-05-29T09:00:42","guid":{"rendered":"https:\/\/engineernewsnetwork.com\/blog\/?p=7548"},"modified":"2018-05-28T11:46:09","modified_gmt":"2018-05-28T10:46:09","slug":"microsemi-expands-silicon-carbide-product-portfolios","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/microsemi-expands-silicon-carbide-product-portfolios\/","title":{"rendered":"Microsemi expands silicon carbide product portfolios"},"content":{"rendered":"<p>Microsemi Corporation will be expanding its <span class=\"highlight highlight-blue\"><a href=\"https:\/\/www.microsemi.com\/product-directory\/discretes\/3613-silicon-carbide-sic\" target=\"_blank\" rel=\"noopener\">Silicon Carbide (SiC) MOSFET and SiC diode product portfolios<\/a><\/span> early next quarter, including samples of its next-generation 1200-volt (V), 25mOhm and 80 mOhm SiC MOSFET devices; next-generation 700V, 50A Schottky barrier diode (SBD) and corresponding die.<\/p>\n<p>These SiC solutions, along with other recently announced devices in the SiC SBD\/MOSFET product families, will be demonstrated June 5th-7th at PCIM Europe 2018, held at the Exhibition Centre in Nuremberg, Germany.<br \/>\n<script async src=\"\/\/pagead2.googlesyndication.com\/pagead\/js\/adsbygoogle.js\"><\/script><br \/>\n<ins class=\"adsbygoogle\" style=\"display: block; text-align: center;\" data-ad-layout=\"in-article\" data-ad-format=\"fluid\" data-ad-client=\"ca-pub-7565662001938327\" data-ad-slot=\"7585079586\"><\/ins><br \/>\n<script>\n     (adsbygoogle = window.adsbygoogle || []).push({});\n<\/script><br \/>\nAs <span class=\"highlight highlight-blue\"><a href=\"https:\/\/engineernewsnetwork.com\/blog\/microsemis-syncserver-s80-recognised-for-innovation-in-electronic-physical-security\/\" target=\"_blank\" rel=\"noopener\">Microsemi<\/a><\/span> continues to expand development efforts for its SiC product family, it has become one of the few suppliers providing a range of Si\/SiC power discrete and module solutions to the market.<\/p>\n<p>These next-generation SiC MOSFETs are suited for a number of applications within the industrial and automotive markets, including hybrid electric vehicle (HEV)\/EV charging, conductive\/inductive onboard chargers (OBCs), DC-DC converters and EV powertrain\/traction control.<\/p>\n<p>They can also be used for switch mode power supplies, photovoltaic (PV) inverters and motor control in medical, aerospace, defense and data centre applications.<\/p>\n<p>&#8220;Fast adoption of SiC solutions for applications such as EV charging, DC-DC converters, powertrain, medical and industrial equipment, and aviation actuation demand a high degree of efficiency, safety and reliability on components used in such systems,&#8221; said Leon Gross, vice president and business unit manager for Microsemi&#8217;s Power Discretes and Modules business unit. &#8220;Microsemi&#8217;s next-generation SiC MOSFET and SiC diode families will include AEC-Q101 qualifications, which will insure high reliability while ruggedness is demonstrated by high repetitive unclamped inductive switching (UIS) capability at rated current without degradation or failures.&#8221;<\/p>\n<p>According to market research firm Technavio, the global SiC market for semiconductor applications is expected to reach nearly $540.5 million by 2021, growing at a compound annual growth rate (CAGR) of more than 18%.<\/p>\n<p>The firm also forecasts the global SiC market for automotive semiconductor applications at nearly 20% CAGR by 2021.<\/p>\n<p>Microsemi is well-positioned with these trends, with its SiC MOSFET and Schottky barrier diode devices avalanche-rated with a high short-circuit withstand rating for robust operation, and the capabilities necessary to enable these growing application trends.<\/p>\n<span class=\"highlight highlight-blue\">Microsemi<\/span>&#8216;s next-generation 1200V, 25\/40\/80mOhm SiC MOSFET devices and die as well as its next-generation 1200V and 700V SiC SBD devices offer customers attractive benefits in comparison to competing Si\/SiC diode\/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche\/UIS rating and higher short-circuit withstand rating for rugged and reliable operation.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Microsemi Corporation will be expanding its Silicon Carbide (SiC) MOSFET and SiC diode product portfolios early next quarter, including samples of its next-generation 1200-volt (V), 25mOhm and 80 mOhm SiC MOSFET devices; next-generation 700V, 50A Schottky barrier diode (SBD) and corresponding die. These SiC solutions, along with other recently announced devices in the SiC SBD\/MOSFET &hellip;<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[168],"tags":[121,4285,2928,4284,4283,542,597,4286,4287,4282,4281],"class_list":["post-7548","post","type-post","status-publish","format-standard","","category-show-time","tag-automotive","tag-conductive-inductive-onboard-chargers","tag-dc-dc-converters","tag-hev-ev-charging","tag-hybrid-electric-vehicle","tag-industrial","tag-microsemi","tag-obcs","tag-powertrain-traction-control","tag-schottky-barrier-diode-devices","tag-silicon-carbide"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Microsemi expands silicon carbide product portfolios - Engineer News Network<\/title>\n<meta name=\"description\" content=\"Microsemi Corporation will be expanding its Silicon Carbide (SiC) MOSFET and SiC diode product portfolios early next quarter, including samples of its next-generation 1200-volt (V), 25mOhm and 80 mOhm SiC MOSFET devices; 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