{"id":7580,"date":"2018-05-30T07:00:47","date_gmt":"2018-05-30T06:00:47","guid":{"rendered":"https:\/\/engineernewsnetwork.com\/blog\/?p=7580"},"modified":"2018-05-29T17:04:21","modified_gmt":"2018-05-29T16:04:21","slug":"toshiba-develops-4-5kv-press-pack-iegt-with-improved-rupture-resistance","status":"publish","type":"post","link":"https:\/\/www.engineernewsnetwork.com\/blog\/toshiba-develops-4-5kv-press-pack-iegt-with-improved-rupture-resistance\/","title":{"rendered":"Toshiba develops 4.5kV press-pack IEGT with improved rupture resistance"},"content":{"rendered":"<span class=\"highlight highlight-blue\"><a href=\"https:\/\/engineernewsnetwork.com\/blog\/toshiba-releases-automotive-40v-n-channel-power-mosfets-in-5mm-x-6mm-package\/\" target=\"_blank\" rel=\"noopener\">Toshiba Electronics Europe<\/a><\/span> will be providing details on its <span class=\"highlight highlight-blue\"><a href=\"http:\/\/www.toshiba.semicon-storage.com\" target=\"_blank\" rel=\"noopener\">new packaging<\/a><\/span> for its 4.5kV class press-pack IEGT (PPI) devices at PCIM 2018 in N\u00fcrnberg.<\/p>\n<p>The new packaging has been developed to further improve the rupture resistance of the device, thereby reducing the likelihood of damage to surrounding components and systems in the event of device failure.<br \/>\n<script async src=\"\/\/pagead2.googlesyndication.com\/pagead\/js\/adsbygoogle.js\"><\/script><br \/>\n<ins class=\"adsbygoogle\" style=\"display: block; text-align: center;\" data-ad-layout=\"in-article\" data-ad-format=\"fluid\" data-ad-client=\"ca-pub-7565662001938327\" data-ad-slot=\"7585079586\"><\/ins><br \/>\n<script>\n     (adsbygoogle = window.adsbygoogle || []).push({});\n<\/script><br \/>\nThe package is the result of research undertaken to evaluate the optimum volume ratio of materials in such packaging.<\/p>\n<p>Through experimentation the optimal ratio was determined where neither destruction of the ceramic, nor material leakage occurred.<\/p>\n<p>After careful measurement, the package was shown capable of withstanding 50 hours of short-circuit failure mode (SCFM). The experiment was executed with one shorted IEGT chip, out of 42 IEGT chips, in a worse-case edge location.<\/p>\n<p>In addition, the rupture resistance tests, undertaken at a 3200 V test condition, resulted in 1.7 times higher resistance than that of standard PPI devices.<\/p>\n<p>The outcomes of the research will be presented at the PCIM Europe 2018 Conference by Raita Kotani and Georges Tchouangue on Thursday, 7th\u00a0June at 11:15am<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Electronics Europe will be providing details on its new packaging for its 4.5kV class press-pack IEGT (PPI) devices at PCIM 2018 in N\u00fcrnberg. The new packaging has been developed to further improve the rupture resistance of the device, thereby reducing the likelihood of damage to surrounding components and systems in the event of device &hellip;<\/p>\n","protected":false},"author":1,"featured_media":7581,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[168],"tags":[4304,409,94],"class_list":["post-7580","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-show-time","tag-cim-europe-2018","tag-packaging","tag-toshiba"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Toshiba develops 4.5kV press-pack IEGT with improved rupture resistance - Engineer News Network<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe will be providing details on its new packaging for its 4.5kV class press-pack IEGT (PPI) devices at PCIM 2018 in N\u00fcrnberg\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.engineernewsnetwork.com\/blog\/toshiba-develops-4-5kv-press-pack-iegt-with-improved-rupture-resistance\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Toshiba develops 4.5kV press-pack IEGT with improved rupture resistance - 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