1.4mΩ 80V N-channel power MOSFET for high efficiency industrial power equipment

Toshiba has introduced the TPM1R408RH, an 80V N-channel power MOSFET based on the company’s latest U-MOS11-H process technology. Designed for high-efficiency industrial switched-mode power supplies for data centre and communications base station equipment, the new device combines ultra-low on-resistance (R_DS(ON)) with fast switching performance to help designers improve system efficiency and reduce power losses.

Compared with the TPM1R908QM, an 80V product with the previous-generation U-MOS X-H process, the TPM1R408RH achieves approximately 26% lower R_DS(ON) of 1.4mΩ (max.) at a gate-source voltage (V_GS) of 10V and drain current (I_D) of 50A, helping to minimise conduction losses in demanding power designs.

To further improve efficiency, the new MOSFET improves the trade-off between R_DS(ON) and total gate charge (Qg), achieving 80nC.

The figure-of-merit (FOM) [R_DS(ON) × Qg] is approximately 45% lower (1.4mΩ x 80nC = 112mΩ·nC) compared with the TPM1R908QM (1.9mΩ x 108nC = 205.2mΩ·nC). These characteristics reduce switching losses and suppress spike voltage generated between the drain and source during switching, helping to reduce electromagnetic interference (EMI) and enable high-speed switching in switched mode power supplies (SMPS).

The TPM1R408RH supports a drain-source voltage of 80V and a maximum drain current (I_D) of 288A (Tc = 25°C), making it suitable for high-current industrial applications. The device is housed in Toshiba’s compact SOP Advance(E) package, which reduces package resistance by approximately 65% and thermal resistance by approximately 15% compared with the existing SOP Advance(N) package, supporting space-efficient system designs.