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Toshiba Electronics Europe GmbH has launched a new 150V N-channel power MOSFET that uses the latest generation U-MOSX-H process to significantly reduce losses. Additionally, voltage spikes between the drain and source during switching have been reduced, thereby improving EMI performance within switching power supplies.
The new device is suitable for a wide range of applications including switching power supplies within industrial equipment, including applications in communication base stations and data centers.
The new TPH9R00CQH MOSFET has a very low drain-source on-resistance (RDS(ON)) of just 9.0mΩ (max. @ VGS=10V). This represents a reduction of approximately 42% when compared to the existing 150V product (TPH1500CNH) that is based upon the current generation U-MOSVIII-H process. Key figures-of-merit (FoM) including RDS(ON) x QSW and RDS(ON) x QOSS have reduced by approximately 20% and 28% respectively, thereby further enhancing performance.
Through careful optimisation of the device structure charge characteristics have been improved. With a total gate charge (Qg) of just 44nC and a gate switch charge (QSW) of 11.7nC the device offers excellent performance, especially in high-speed applications.
The new TPH9R00CQH offers two surface mount (SMD) package options – SOP Advance (5.0mm x 6.0mm) and SOP Advance(N) (4.9mm x 6.1mm) which can be selected to meet the needs of any application
