High-side switches support decentralised vehicle power distribution architectures

Now available from Rutronik UK, Infineon’s Power PROFET protected high-side switches support the trend towards decentralised, intelligent and cost effective vehicle power distribution architectures.

Power PROFET is a benchmark family of ultra-low ohmic protected high-side switches (1.0mΩ to 2.5mΩ) with integrated protection functions and diagnostics for automotive and 12V industrial markets.



The devices are especially designed to drive high current loads of 20 to 40A DC and to replace high current relays and fuses in a wide range of high energy applications (eg, module main switches and trailer node supply) and heating (eg, PTC heaters and rear defoggers).

The Power PROFET family consists of four pin-compatible switches controlling currents from 20A to 40A DC. They share the same feature set.

Only their on-state resistance RDS(ON) scales with 1.0mΩ, 1.5mΩ, 2.0mΩ, or 2.5mΩ for each device. For the easy evaluation of the Power PROFET, there are two shields for Arduino.

The ultra-low ohmic smart high-side power switch family with 1.0mΩ/1.5mΩ/2.0mΩ/2.5mΩ devices offers 100% pin compatibility. It has high current capability with up to 25/29/33/40A DC (INOM) and up to 150A inrush current.

Protection performance

Key features include protection performance of more than 1,000,000 short circuit cycles (Grade A according to AEC-Q100); integrated protection functions and diagnostics; operating voltage range from 8V to 18V; 3.3V to VS compatible logic input; very low leakage current at OUT pin; and ESD protection.

Benefits of the devices include reducing the number of components at system level (relay driver, socket, fuses, connectors, free-wheeling diode), significantly decreasing the module size and cost.

Power PROFET devices can be used for the replacement of electromechanical relays, fuses and discrete circuits in power distribution and junction boxes.

Infineon’s on-demand webinar provides further technical insights and a comparison between electromechanical and semiconductor solutions, details of the challenges of high-current applications and the cost effectiveness of semiconductors at device and system level.