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Toshiba has developed a new 2200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in …
Read More »2200V silicon carbide MOSFETs
Toshiba has developed a new 2200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in …
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