100V N-channel power MOSFET offering 2.7mΩ in 5.15mm x 6.1mm package based on U-MOS11-H process

Toshiba has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET fabricated with its latest-generation process, known as U-MOS11-H. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC-DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment.

Due to the advanced 100V U-MOS11-H process, the TPH2R70AR5 offers significant performance advantages over devices manufactured with the existing U-MOSX-H process. For example, compared to the earlier TPH3R10AQM, the drain-source on-resistance (R_DS(ON)) has reduced by around 8% to just 2.7mΩ (max.) while the total gate charge (Q_g) is now 37% lower at 52nC (typ.). The R_DS(ON) x Q_g figure-of-merit (FoM) is therefore improved by 42%.

In addition, the TPH2R70AR5 achieves high-speed body diode performance through the application of lifetime control technology. As a result, compared to the TPH3R10AQM, switching speed is improved and, additionally, the diode recovery time and noise are reduced. Lifetime control technology also reduces reverse recovery charge (Q_rr) to 55nC (typ.) and suppresses voltage spikes. The R_DS(ON) x Q_rr FoM is improved by around 43%.

The prominent R_DS(ON), Q_g, and Q_rr characteristics reduce both conduction and switching losses, contributing to higher efficiency in power-related applications. This reduces the operating cost and permits greater power density. Housed in the SOP Advance (N) package measuring just 5.15mm x 6.1mm, the device offers excellent mounting compatibility with industry standards.

The new TPH2R70AR5 is rated for a maximum drain current (I_D) of 190A at an ambient temperature of 25°C. The device is capable of operating with a channel temperature (T_ch) up to 175°C, thereby reducing the need for cooling measures.