40V, 0.67mΩ N-channel MOSFET to enhance power supply efficiency

Toshiba introduces the TPHR6704RL, a 40V N-channel power MOSFET fabricated using its latest-generation U-MOS11-H process. The device is optimised for switched-mode power supplies used in data centers, as well as industrial equipment such high-efficiency DC-DC converters, switching voltage regulators, and motor drivers.

By adopting the U-MOS11-H process, the TPHR6704RL achieves a typical drain-source on-resistance (R_DS(ON)) of 0.52mΩ at a gate-source voltage (V_GS) of 10V, and a maximum R_DS(ON) of 0.67mΩ at a V_GS of 10V. Compared to the existing 40V product (TPHR8504PL) manufactured using the U-MOS IX-H process, the R_DS(ON) is approximately 21% lower. In addition, the switching performance of the new device improves, with a typical total gate charge (Q_g) of 88nC and a gate switch charge (Q_SW) of 24nC, resulting in a reduction in the R_DS(ON) × Q_g figure-of-merit by approximately 37%, enabling low-loss operation.

TPHR6704RL will help designers to reduce EMI in switched-mode power supplies by minimising voltage spikes generated between the drain and source during switching.

The TPHR6704RL also offers robust current and thermal performance, with a drain current (I_D) rating of up to 420A and a channel-to-case thermal resistance of 0.71°C/W at 25°C, enabling stable operation under high-load conditions. The device operates over a wide temperature range, with a maximum channel temperature (T_ch) of 175°C, supporting reliable operation in demanding industrial environments.

Housed in the SOP Advance (N) package, the device offers high footprint compatibility with existing SOP Advance designs, simplifying replacement and board-level upgrades.

To support efficient power supply design, Toshiba offers a comprehensive set of circuit design tools. In addition to the G0 SPICE model for rapid functional verification, high-accuracy G2 SPICE models are available to accurately reproduce transient and switching characteristics, helping designers optimise efficiency, EMI, and thermal performance.