The NPN Silicon AF Transistor BC817K, from Diotec, in a SOT-23 package, now available from Rutronik, is an equivalent substitute for the obsolete BC817K from Infineon.
With a power dissipation of 500mW, a high collector current of 500mA, a peak collector current of up to 1A as well as a high current gain between 100 (BC817K-16) and 630 (BC817K-40), measured at 100mA, the BC817K is ideal for all general AF applications.
The surface mount transistor has a low collector-emitter saturation voltage of 0,7V, measured with pulses of 300µs and a duty cycle below 2%. Its SOT-23 plastic case is RoHS compliant.
Tags Diotec Diotec NPN Transistor BC817K Rutronik
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