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Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation …
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Third generation 650V silicon carbide (SiC) MOSFETs
Toshiba Electronics Europe has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment. …
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