Toshiba Archives - Page 10 of 29 - Engineer News Network

SiC 650V Schottky barrier diodes with forward voltage of 1.2V

18th July 2023 Electronics Comments Off on SiC 650V Schottky barrier diodes with forward voltage of 1.2V 998

Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation …

6th July 2023 Electronics Comments Off on 100V N-Channel MOSFET supports miniaturisation within power supply applications 823

Toshiba has launched a new 100V N-channel power MOSFET based on Toshiba’s latest generation U-MOSX-H process. The new device is …

4th July 2023 Electronics Comments Off on ARM Cortex-M3 microcontrollers with 1MB Flash Memory 897

Toshiba has started mass production of new microcontrollers (TMPM3HxF10xx) in the M3H group of the TXZ+ Family Advanced Class, manufactured …

27th June 2023 Electronics Comments Off on Low current, high input voltage LDO regulators 855

Toshiba has launched the first three devices in the new TCR1HF series of low drop-out (LDO) regulators. Featuring high input …

21st June 2023 Electronics Comments Off on 600V super junction N-channel power MOSFET series with ultra-low RDS(on) 662

Toshiba has introduced a new series of N-channel power MOSFETs. The first product in the 600V DTMOSVI series is the …