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Toshiba has developed a new 2200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in …
Read More »2200V silicon carbide MOSFETs
Driver provides dual H-bridge output stage that can drive two motors at up to 5A or a single motor up to 10A
Toshiba has collaborated with MikroElektronika (MIKROE) to integrate its TB9053 DC-motor driver IC into the DC Motor 26 Click Board …
Read More »Common-drain N-channel MOSFET
Toshiba launches a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in …
Read More »SiC 650V Schottky barrier diodes with forward voltage of 1.2V
Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation …
Read More »100V N-Channel MOSFET supports miniaturisation within power supply applications
Toshiba has launched a new 100V N-channel power MOSFET based on Toshiba’s latest generation U-MOSX-H process. The new device is …
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