Toshiba launches a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in …
Read More »SiC 650V Schottky barrier diodes with forward voltage of 1.2V
Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation …
Read More »100V N-Channel MOSFET supports miniaturisation within power supply applications
Toshiba has launched a new 100V N-channel power MOSFET based on Toshiba’s latest generation U-MOSX-H process. The new device is …
Read More »ARM Cortex-M3 microcontrollers with 1MB Flash Memory
Toshiba has started mass production of new microcontrollers (TMPM3HxF10xx) in the M3H group of the TXZ+ Family Advanced Class, manufactured …
Read More »Low current, high input voltage LDO regulators
Toshiba has launched the first three devices in the new TCR1HF series of low drop-out (LDO) regulators. Featuring high input …
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