Engineer News Network The ultimate online news and information resource for today’s engineer
Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices …
Read More »1200V SiC MOSFETs in bare die format
Reusable electronic fuse for high-voltage power management
Toshiba has launched two new products to its electronic fuse (eFuse IC) offering. The TCKE903NL and TCKE905ANA products are reusable, …
Read More »1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V
Toshiba enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising …
Read More »Automotive photocoupler with output withstands voltage of 900V (min)
Toshiba announces a new automotive-compliant photorelay designed for 400V battery-related control systems. The TLX9152M features a minimum output withstand voltage …
Read More »Hardware logic eliminates the requirement for software development, resulting in a faster time-to-market
Toshiba will start sampling the TB9033FTG, a Clock Extension Peripheral Interface (CXPI) responder interface IC with built-in hardware logic. The …
Read More »