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Toshiba enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising …
Read More »1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V
Toshiba enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising …
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