SiC 650V Schottky barrier diodes with forward voltage of 1.2V 18th July 2023 Electronics Comments Off on SiC 650V Schottky barrier diodes with forward voltage of 1.2V 504 Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation … Read More » Share Facebook Twitter Stumbleupon LinkedIn Pinterest