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New 1,800V and 3,300V G3VH devices drive efficient, lightweight electrification

SiC-MOSFET relays for high-voltage power and test applications

OMRON Electronic Components Europe has introduced new G3VH SiC-MOSFET relays with voltage ratings of 3,300V and 1,800V, delivering solid-state power-switching advantages at bus and battery voltages up to 1000V and beyond.

With their elevated ratings, these relays ensure robust and reliable switching as system designers adopt increased voltages to maximise energy efficiency and leverage smaller, lighter wires and connections. While able to operate above normal maximum voltage limits for ordinary silicon-based relays, the new G3VH devices are longer-lasting and physically smaller than conventional reed relays. They are typically used in industrial drives and automation, solar- and wind-power generators, energy-storage systems (ESS) for ground fault detection, and automated test equipment (ATE) for high-voltage, wide-bandgap power-semiconductors.

Containing back-to-back silicon-carbide (SiC) MOSFETs with an optically isolated gate driver, the relays easily handle high operating voltages within their compact 6-pin dual inline package (DIP-6) outline. Benefiting from inherently low internal capacitances that ensure clean and efficient switching up to high speeds, the relays have turn-on time of 1ms or 2ms and can turn off within 0.2ms.

With this performance, G3VH series devices permit fast response to system safety commands as well as allowing shorter test cycle times in ATE applications. While SiC’s naturally high dV/dt tolerance ensures stable switching even in challenging conditions, the MOSFETs also withstand high operating temperatures and thermal stresses to endure long cycle life in all environments.

The new devices comprise two series, including the G3VH-331, rated for 3300V, 300mA continuous load current, and 900mA pulse-on current (Iop), with total resistance of 3.5Ω between the terminals. The 1800V G3VH-181 series can handle up to 30mA continuous current and 80mA pulse current, with resistance of 120Ω.

All the new G3VH devices are type 1a (SPST, normally open) and are in production now in a choice of surface-mount and through-hole package styles.

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