Bipolar transistors feature a 3.3mm x 3.3mm package and enable higher power density

Diodes Incorporated announces a family of NPN and PNP power bipolar transistors in a small form factor (3.3mm x 3.3mm), offering increased power density for applications requiring up to 100V and 3A. 

Featuring a smaller form factor, these NPN and PNP transistors enable higher power density designs in gate-driving power MOSFETs and IGBTs, linear DC-DC step-down regulators, PNP LDOs, and load switch circuits.

Targeted at both industrial and consumer markets, they range from 25V to 100V VCEO; they also feature total power dissipation of 2W and are rated up to +175°C operation. 

The transistors are housed in the compact PowerDI3333 surface mount package measuring just 3.3mm x 3.3mm x 0.8mm, occupying 70% less PCB space than the traditional SOT223, while delivering similar power dissipation in a more thermally efficient package.

The PowerDI3333 package increases PCB throughput by featuring wettable flanks, which help facilitate the high-speed, automatic optical inspection (AOI) of solder joints, thus eliminating the need for X-ray inspection.

The full range of DXTN07xxxxFG and DXTP07xxxxFG devices are sampling commercially with automotive qualification to be completed by end of Q1 2019.