Engineer News Network The ultimate online news and information resource for today’s engineer
A new range of modular DIN rail components (MDRC) from Mitsubishi Electric aims to address demand for high-performance protection and …
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November, 2024
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20 November
US to spearhead global ammonia capacity additions through 2030
The US is set to drive the global ammonia capacity additions, occupying a share of 37% by 2030, as both …
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19 November
Maximising opportunities for robotics and automation
Mark Gearing and Peter Williamson discuss the importance of integrating robotics and automation in manufacturing, emphasising their role in addressing …
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19 November
China to spearhead global phenol capacity additions through 2028
China is likely to register the highest phenol capacity additions globally by 2028, contributing about 67% of the total capacity …
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18 November
The benefits of residual current monitoring in critical applications
According to the International Energy Agency, global internet traffic has increased by 15 times since 2010, meaning the demand for …
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18 November
Single-stage EMI filter handles high interference levels
The SMF2132 high-performance single-phase EMI filter series from EMC solutions provider EMIS has been designed for motor and power drive …
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15 November
Minimising motor vibration for hand-held tools
Vibration is the enemy of a hand-held dentistry tool. To maximise the precision of a dental procedure, as well as …
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15 November
Military and defence: the role of mass finishing and shot blasting
Military and defence applications have a specific set of requirements when it comes to surface finishing. Colin Spellacy highlights how …
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14 November
Fire-resistant surface-mounted enclosures
To protect electrical junctions in buildings from the threat of fire, embedding connections in concrete has been one of the …
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14 November
120V/4A half-bridge gate driver raises robustness and efficiency in automotive applications
Nexperia‘s new series of high-performance gate driver ICs are designed for driving both high-side and low-side N-channel MOSFETs in a …
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