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Toshiba has launched a new 150V N-channel power MOSFET based upon its latest generation U-MOS X-H Trench process. The new device (TPH9R00CQ5) is specifically designed for use in high performance switching power supplies such as those used in communication base stations as well as other industrial applications.
With a maximum VDSS rating of 150V and current handling (ID) of 64A, the new device boasts a very low drain-source On-resistance (RDS(ON)) of just 9.0mΩ (max). This is a reduction of more than 40% versus previous generation product TPH1500CNH1.
In high performance power solutions that use synchronous rectification, reverse recovery performance is highly important. Due to inclusion of a high-speed body diode, the new TPH9R00CQ5 reduces the reverse recovery charge (Qrr) by around 74% (to 34nC typ.) when compared to an existing device such as the TPH9R00CQH. Additionally, the reverse recovery time (trr) of just 40ns is an improvement of over 40% compared with earlier devices.
Along with a low gate charge (Qg) of just 44nC, these improvements contribute significantly to reduced losses and increased power density in high-performance, efficient power solutions. A channel temperature of 175ºC (max) is extraordinary for MOSFETs with high-speed diode and will offer the designer increased thermal headroom.
The new device also reduces spike voltages created during switching, thereby improving EMI characteristics of designs, and reducing the need for filtering. It is housed in a versatile, surface-mount SOP Advance(N) package measuring just 4.9mm x 6.1mm x 1.0mm.
To support designers, Toshiba has developed a G0 SPICE model for rapid verification of the circuit function as well as highly accurate G2 SPICE models, for accurate reproduction of transient characteristics.
