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Toshiba has launched the TWxxxZxxxC series of 10 silicon carbide (SiC) MOSFETs based upon their third-generation technology. They are intended …
Read More »3rd generation silicon carbide (SiC) MOSFETs with reduced switching losses
2200V silicon carbide MOSFETs
Toshiba has developed a new 2200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in …
Read More »Driver provides dual H-bridge output stage that can drive two motors at up to 5A or a single motor up to 10A
Toshiba has collaborated with MikroElektronika (MIKROE) to integrate its TB9053 DC-motor driver IC into the DC Motor 26 Click Board …
Read More »Common-drain N-channel MOSFET
Toshiba launches a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in …
Read More »SiC 650V Schottky barrier diodes with forward voltage of 1.2V
Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation …
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