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Toshiba has started test-sample shipments of the TW007D120E, 1200V trench-gate SiC MOSFET primarily intended for power supply systems in AI …
Read More »1200V trench-gate SiC MOSFET for next-generation AI data centres
Toshiba has started test-sample shipments of the TW007D120E, 1200V trench-gate SiC MOSFET primarily intended for power supply systems in AI …
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