ON Semiconductor will be focusing on its Wide Band Gap technology and devices at this year’s PCIM, Nuremberg, 5th June–7th …
Read More »Microsemi announces extremely low inductance package
Microsemi announces its electric vehicle/hybrid electric vehicle dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power …
Read More »Rugged tablet for productivity gains in port and terminal
The recently launched of JLT Mobile Computers’ MT2010 rugged tablet is highly portable due to its compact format and provides operators with …
Read More »Toshiba develops 4.5kV press-pack IEGT with improved rupture resistance
Toshiba Electronics Europe will be providing details on its new packaging for its 4.5kV class press-pack IEGT (PPI) devices at …
Read More »Microsemi expands silicon carbide product portfolios
Microsemi Corporation will be expanding its Silicon Carbide (SiC) MOSFET and SiC diode product portfolios early next quarter, including samples …
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