SiC Archives - Engineer News Network

1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V

3rd October 2024 Electronics Comments Off on 1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V 347

Toshiba enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising …

31st August 2023 Process Comments Off on 2200V silicon carbide MOSFETs 522

Toshiba has developed a new 2200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in …

18th July 2023 Electronics Comments Off on SiC 650V Schottky barrier diodes with forward voltage of 1.2V 778

Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation …

1st September 2022 Electronics Comments Off on Third generation 650V silicon carbide (SiC) MOSFETs 882

Toshiba Electronics Europe has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment. …

15th January 2021 Design, Process Comments Off on Silicon carbide optics for high energy applications 997

Joe Salemi and Mike Albrecht look at the manufacture of silicone carbide (SiC) optics Silicon Carbide (SiC) optics are becoming …