SiC Archives - Engineer News Network

2200V silicon carbide MOSFETs

31st August 2023 Process Comments Off on 2200V silicon carbide MOSFETs 224

Toshiba has developed a new 2200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in …

18th July 2023 Electronics Comments Off on SiC 650V Schottky barrier diodes with forward voltage of 1.2V 487

Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation …

1st September 2022 Electronics Comments Off on Third generation 650V silicon carbide (SiC) MOSFETs 475

Toshiba Electronics Europe has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment. …

15th January 2021 Design, Process Comments Off on Silicon carbide optics for high energy applications 597

Joe Salemi and Mike Albrecht look at the manufacture of silicone carbide (SiC) optics Silicon Carbide (SiC) optics are becoming …

1st May 2019 Process Comments Off on Efficient switching at higher frequencies 863

Microchip announces, via its Microsemi subsidiary, the production release of a family of SiC power devices that offer proven ruggedness …