Engineer News Network The ultimate online news and information resource for today’s engineer
Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices …
Read More »1200V SiC MOSFETs in bare die format
Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices …
Read More »