Toshiba has introduced eight new super junction N-channel power MOSFETs to strengthen its latest DTMOSVI series – which has already gained a lot of market traction thanks to an excellent ratio of on-resistance and support for elevated switching speeds.
The 650V-rated TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z and TK210V65Z devices all possess highly appealing performance parameters.
These MOSFETs present engineers with a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation.
As a consequence, they can raise the efficiency of switch-mode power supplies by approximately 0.36 % – thereby enabling a substantial decrease in switching losses, compared to the previous generation.
The new MOSFETs are targeted at use in the switch-mode power supplies of a broad range of industrial equipment (including data center infrastructure, back-up power sources and the power conditioners of photovoltaic generators). They will allow major performance upgrades when replacing existing devices.
The TK110Z65Z, TK125V65Z, TK170V65Z and TK210V65Z offer a Kelvin source pin for improved control and efficiency increase potential.
The TK110N65Z and TK110Z65Z fit into TO-247 packages with 3/4 pin’s, while the TK110A65Z, TK155A65Z and TK190A65Z come in fully isolated TO-220SIS packages.
Finally, the TK125V65Z, TK170V65Z and TK210V65Z are all housed in an 8mm x 8mm DFN package format for surface mounting. This means DTMOSVI solutions can now be sourced whatever the specific board real estate requirements are.